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SEMICONDUCTOR 2N7002K
N Channel MOSFET
TECHNICAL DATA ESD Protected 2000V
INTERFACE AND SWITCHING APPLICATION.
FEATURES E
ESD Protected 2000V. L B L
DIM MILLIMETERS
High density cell design for low RDS(ON). A _
2.93+ 0.20
Voltage controlled small signal switch. B 1.30+0.20/-0.15
C 1.30 MAX
D
2
Rugged and reliable. 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
High saturation current capablity.
H
1
G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
P P L 0.55
M 0.20 MIN
MAXIMUM RATING (Ta=25 ) N 1.00+0.20/-0.10
N
C
J
P 7
CHARACTERISTIC SYMBOL RATING UNIT M
K
Drain-Source Voltage VDSS 60 V
1. SOURCE
Gate-Source Voltage VGSS 20 V 2. GATE
Continuous ID 300 3. DRAIN
Drain Current mA
Pulsed (Note 1) IDP 1200
Drain Power Dissipation (Note 2) PD 300 mW
SOT-23
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note 1) Pulse Width 10 , Duty Cycle 1%
Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm)
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G Type Name
WC
S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A
Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 A
Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 A
2009. 11. 17 Revision No : 2 1/4
2N7002K
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.1 - 2.35 V
VGS=10V, ID=500mA - 1.2 1.8
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=50mA - 1.5 2.1
VGS=10V, ID=500mA - 0.6 0.9
Drain-Source ON Voltage VDS(ON) V
VGS=5V, ID=50mA - 0.075 0.105
On State Drain Current ID(ON) VGS=10V, VDS= 2 VDS(ON) 500 - - mA
Forward Transconductance gFS VDS=10V, ID=500mA 200 580 - mS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) - 760 1150 mV
Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss - 52.1 -
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz - 3.9 - pF
Output Capacitance Coss - 7.7 -
Turn-On Time ton VDD=30V, RL=155 , ID=190mA, - 11.1 -
Switching Time nS
Turn-Off Time toff VGS=10V - 22.5 -
SWITCHING TIME TEST CIRCUIT
ton toff
td(off)
tr tf
td(on)
VDD 90% 90%
RL
VIN D VOUT
OUTPUT VOUT 10%
VGS
INVERTED
G
90%
50% 50%
S
INPUT
VIN 10%
PULSE WIDTH
2009. 11. 17 Revision No : 2 2/4
2N7002K
ID - VDS RDS(ON) - ID
DRAIN SOURCE ON - RESISTANCE RDS ( )
1.5 COMMON SOURCE 6.0
COMMON SOURCE
Ta = 25 C 10V 5V Ta = 25 C
5.0
DRAIN CURRENT ID (A)
1.2
6V
4.0
7V VGS = 3V
0.9
4V
3.0
0.6
2.0 4V
5V
0.3 1.0
VGS = 3V 6V 7V 10V
0.0 0.0
0.1 0.2 0.3 0.4 0.5 0.6
0.0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-CURRENT ID (A)
RDS(ON) - Tj SOURCE THRESHOLDVOLTAGE Vth (V) Vth - Tj
4.0
DRAIN SOURCE ON - RESISTANCE
1.4
Common Source
3.5 VGS=VDS
1.3
NORMALIZED GATE GATE
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