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SEMICONDUCTOR 2N7002KA
N Channel MOSFET
TECHNICAL DATA ESD Protected 2000V
INTERFACE AND SWITCHING APPLICATION.
FEATURES E
L B L
ESD Protected 2000V.
DIM MILLIMETERS
High density cell design for low RDS(ON). A _
2.93 + 0.20
B 1.30+0.20/-0.15
Voltage controlled small signal switch. C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
Rugged and reliable.
A
G
E 2.40+0.30/-0.20
H
High saturation current capablity. 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
MAXIMUM RATING (Ta=25 )
C
P 7
J
Q 0.1 MAX
CHARACTERISTIC SYMBOL RATING UNIT
K
M
Drain-Source Voltage VDSS 60 V 1. SOURCE
Gate-Source Voltage VGSS 20 V 2. GATE
3. DRAIN
Continuous ID 300
Drain Current mA
Pulsed (Note 1) IDP 1200
Drain Power Dissipation (Note 2) PD 350 mW
SOT-23
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note 1) Pulse Width 10 , Duty Cycle 1%
Note 2) Package mounted on 99% Alumina 10 8 0.6mm
EQUIVALENT CIRCUIT
D Marking
Lot No.
G
Type Name
2P
S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A
Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 A
Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 A
C=100pF, R=1.5K
ESD-Capability* - Both forward and reverse 2000 - - V
direction 3 pulse
*Failure cirterion : IDSS > 1 A at VDS=60V, IGSSF>10 A at VGS=20V, IGSSR>-10 A at VGS=-20V.
2011. 4. 4 Revision No : 1 1/3
2N7002KA
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.1 - 2.35 V
VGS=10V, ID=500mA - - 2.3
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=50mA - 1.7 2.7
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note 1) - - 1.15 V
Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss - 18.0 -
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1 - 3.0 - pF
Output Capacitance Coss - 7.0 -
Turn-On Time ton VDD=30V, RL=155 , ID=190 , - 15 -
Switching Time nS
Turn-Off Time toff VGS=10V - 40 -
SWITCHING TIME TEST CIRCUIT
2011. 4. 4 Revision No : 1 2/3
2N7002KA
2011. 4. 4 Revision No : 1 3/3
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