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2sa812


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                                                                                                             2SA8 1 2




                                                                                                   SOT-23
TRANSISTOR(PNP)
                                                                                                   1. BASE                    Unit : mm

FEATURES                                                                                           2. EMITTER

   Complementary to 2SC1623                                                                        3. COLLECTOR

   High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)
   High Voltage: Vceo=-50V


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                         Parameter                Value         Units
VCBO               Collector- Base Voltage                -60             V
VCEO               Collector-Emitter Voltage              -50             V
VEBO               Emitter-Base Voltage                       -5          V
IC                 Collector Current -Continuous          -100          mA
PC                 Collector Power Dissipation            200          mW
TJ                 Junction Temperature                   150             
Tstg               Storage Temperature                  -55-150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                   Parameter                          Symbol          Test     conditions      MIN              TYP                  MAX       UNIT

         Collector-base breakdown voltage             V(BR)CBO      IC=-100A, IE=0              -60                                            V

         Collector-emitter breakdown voltage          V(BR)CEO      IC= -1mA, IB=0              -50                                            V

         Emitter-base breakdown voltage               V(BR)EBO      IE= -100A, IC=0                -5                                          V

         Collector cut-off current                      ICBO        VCB=- 60 V, IE=0                                                 -0.1      A
         Emitter cut-off current                        IEBO        VEB= -5V, IC=0                                                   -0.1      A
         DC current gain                                hFE         VCE=- 6V, IC= -1mA          90                                   600

         Collector-emitter saturation voltage         VCE(sat)      IC=-100mA, IB= -10mA                                             -0.3      V

         Base-emitter voltage                           VBE         IC=-1mA, VCE=-6V           -0.58                                 -0.68     V

         Transition frequency                            fT         VCE=-6V,    IC= -10mA                       180                            MHz

         Collector output capacitance                   Cob         VCB=-10V,IE=0,f=1MHz                        4.5                             pF


CLASSIFICATION OF hFE
         Rank                                  M4                    M5                       M6                                       M7
         Range                            90-180                   135-270                  200-400                                  300-600
         Marking                               M4                    M5                       M6                                       M7

     1




 JinYu                                              www.htsemi.com
 semiconductor

                                                                                                                      Date:2011/05
                                 2SA8 1 2




1




JinYu           www.htsemi.com
semiconductor

                                    Date:2011/05



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