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                                                                                                                             2SA1 036


TRANSISTOR(PNP)
                                                                                           SOT-23


FEATURES
    Large IC. ICMax.= -500 mA
    Low VCE(sat). Ideal for low-voltage operation.
                                                                                           1. BASE
                                                                                           2. EMITTER

MARKING : HP, HQ, HR                                                                       3. COLLECTOR


MAXIMUM RATINGS (TA=25 unless otherwise noted)

         Symbol               Parameter                    Value      Units
VCBO                Collector-Base Voltage                   -40          V
VCEO                Collector-Emitter Voltage                -32          V
VEBO                Emitter-Base Voltage                     -5           V
IC                  Collector Current -Continuous           -500          mA
PC                  Collector Power Dissipation             200        mW
TJ                  Junction Temperature                    150           
Tstg                Storage Temperature                    -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                         Symbol       Test    conditions                MIN      TYP                   MAX      UNIT

 Collector-base breakdown voltage               V(BR)CBO   IC=-100A,IE=0                        -40                                     V

 Collector-emitter breakdown voltage            V(BR)CEO   IC=-1mA,IB=0                         -32                                     V

 Emitter-base breakdown voltage                 V(BR)EBO   IE=-100A,IC=0                        -5                                      V

 Collector cut-off current                        ICBO     VCB=-20V,IE=0                                                          -1   A

 Emitter cut-off current                          IEBO     VEB=-4V,IC=0                                                           -1   A

 DC current gain                                  hFE      VCE=-3V,IC=-10mA                     82                            390

 Collector-emitter saturation voltage           VCE(sat)   IC=-100mA,IB=-10mA                                                 -0.4      V

 Transition frequency                              fT      VCE=-5V,IC=-20mA,f=100MHz                    200                            MHz

 Collector output capacitance                     Cob      VCB=-10V,IE=0,f=1MHz                           7                            pF



 CLASSIFICATION OF           hFE
 Rank                                             P                               Q                                           R

 Range                                       82 - 180                          120 - 270                        180 - 390


     1




 JinYu                                           www.htsemi.com
 semiconductor

                                                                                                              Date:2011/05
                                           2SA1 0 3 6
Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                             Date:201/5



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