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                                                                                                       2SA1 037



                                                                                          SOT-23
TRANSISTOR(PNP)
FEATURES
    Excellent hFE linearity.
    Complments the 2SC2412                                                                1. BASE
                                                                                          2. EMITTER
                                                                                          3. COLLECTOR
MARKING : FQ, FR, FS

MAXIMUM RATINGS (TA=25 unless otherwise noted)

         Symbol                                 Parameter                                   Value                             Units
VCBO                Collector-Base Voltage                                                   -60                                  V
VCEO                Collector-Emitter Voltage                                                -50                                  V
VEBO                Emitter-Base Voltage                                                     -6                                   V
IC                  Collector Current -Continuous                                            150                                  mA
PC                  Collector Power Dissipation                                              200                                  mW
TJ                  Junction Temperature                                                     150                                  
Tstg                Storage Temperature                                                    -55-150                                

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                         Symbol       Test   conditions                MIN      TYP                    MAX      UNIT

 Collector-base breakdown voltage               V(BR)CBO   IC=-50A,IE=0                        -60                                      V

 Collector-emitter breakdown voltage            V(BR)CEO   IC=-1mA,IB=0                        -50                                      V

 Emitter-base breakdown voltage                 V(BR)EBO   IE=-50A,IC=0                        -6                                       V

 Collector cut-off current                        ICBO     VCB=-60V,IE=0                                                      -0.1     A

 Emitter cut-off current                          IEBO     VEB=-6V,IC=0                                                       -0.1     A

 DC current gain                                  hFE      VCE=-6V,IC=-1mA                    120                             560

 Collector-emitter saturation voltage           VCE(sat)   IC=-50mA,IB=-5mA                                                   -0.5      V

 Transition frequency                              fT      VCE=-12V,IC=-2mA,f=30MHz                     140                            MHz

 Collector output capacitance                     Cob      VCB=-12V,IE=0,f=1MHz                          4.0                  5.0      pF



 CLASSIFICATION OF           hFE
 Rank                                            Q                                R                                           S

 Range                                       120 - 270                        180 - 390                        270 - 560


     1




     JinYu                                       www.htsemi.com
 semiconductor

                                                                                                               Date:2011/05
                                           2SA1 0 3 7
Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                               Date:201/5

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