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                                                                                                       2SA1 1 62


     TRANSISTOR(PNP)
                                                                                        SOT-23


FEATURES
  . Low noise : NF= 1dB(Typ.),10dB (Max.)
  . Complementary to 2SC2712.
                                                                                        1. BASE
  . Small Package.
                                                                                        2. EMITTER
                                                                                        3. COLLECTOR
MARKING: SO , SY , SG

MAXIMUM RATINGS (TA=25 unless otherwise noted)

       Symbol                                   Parameter                                 Value                        Units
VCBO                Collector-Base Voltage                                                 -50                           V
VCEO                Collector-Emitter Voltage                                              -50                           V
VEBO                Emitter-Base Voltage                                                   -5                            V
IC                  Current -Continuous                                                   -150                          mA
PD                  Collector Power Dissipation                                            150                          mW
TJ                  Junction Temperature                                                   125                           
Tstg                Storage Temperature                                                  -55-125                         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                           Symbol       Test   conditions              MIN      TYP               MAX     UNIT

 Collector-base breakdown voltage               V(BR)CBO   IC=-100u A,IE=0                   -50                                V

 Collector-emitter breakdown voltage            V(BR)CEO   IC=-1mA,IB=0                      -50                                V

 Emitter-base breakdown voltage                 V(BR)EBO   IE=-100 u A,IC=0                  -5                                 V

 Collector cut-off current                        ICBO     VCB=-50V,IE=0                                               -0.1    uA

 Emitter cut-off current                          IEBO     VEB=-5V,IC=0                                                -0.1    uA

 DC current gain                                  hFE      VCE=-6V,IC=-2mA                   70                        400

 Collector-emitter saturation voltage           VCE(sat)   IC=-100mA,IB=-10mA                                          -0.3     V

 Transition frequency                              fT      VCE=-10V,IC=-1mA                  80                                MHz

 Collector output capacitance                     Cob      VCB=-10V,IE=0,f=1MHz                                         7       pF

                                                           VCE=-6V,Ic=0.1mA,
 Noise figure                                     NF                                                                   10      dB
                                                           f=1KHZ,Rg=10K


 CLASSIFICATION OF           hFE
 Rank                                      O                                     Y                             GR(G)

 Range                                  70-140                                120-240                   200-400

 1




 JinYu                                          www.htsemi.com
 semiconductor

                                                                                                        Date:2011/05
                                     2SA1 1 62

ypical Characteristics




   2




   JinYu            www.htsemi.com
   semiconductor

                                       Date:2011/05

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