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2sa1201


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                                                                                                          2SA1 201




     TRANSISTOR(PNP)                                                              SOT-89

                                                                                  1. BASE
FEATURES
   High voltage
   High transition frequency                                                      2. COLLECTOR        1
   Complementary to 2SC2881                                                                               2
                                                                                  3. EMITTER                        3
MAXIMUM RATINGS (TA=25 unless otherwise noted)
    Symbol               Parameter              Value        Units
VCBO           Collector-Base Voltage            -120          V
VCEO           Collector-Emitter Voltage         -120          V
VEBO           Emitter-Base Voltage               -5           V
IC             Collector Current -Continuous     -0.8          A
PC             Collector Power Dissipation       0.5          W
TJ             Junction Temperature              150           
Tstg           Storage Temperature             -55-150         
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
              Parameter                        Symbol        Test    conditions                MIN            TYP             MAX    UNIT

    Collector-base breakdown voltage           V(BR)CBO    IC=-1mA,IE=0                        -120                                   V

    Collector-emitter breakdown voltage        V(BR)CEO    IC=-10mA,IB=0                       -120                                   V

    Emitter-base breakdown voltage             V(BR)EBO    IE=-1mA,IC=0                         -5                                    V

    Collector cut-off current                    ICBO      VCB=-120V,IE=0                                                     -0.1   A

    Emitter cut-off current                      IEBO      VEB=-5V,IC=0                                                       -0.1   A

    DC current gain                              hFE       VCE=-5V,IC=-100mA                   80                             240

    Collector-emitter saturation voltage       VCE(sat)    IC=-500mA,IB=-50mA                                                 -1      V

    Base-emitter voltage                         VBE       VCE=-5V,IC=-500mA                                                  -1      V

    Transition frequency                          fT       VCE=-5V,IC=-100mA                                  120                    MHz

    Collector output capacitance                 Cob       VCB=-10V,IE=0,f=1MHz                                               30     pF



CLASSIFICATION OF               hFE
    Rank                                               O                                                  Y

    Range                                        80-160                                          120-240

    Marking                                        DO                                                 DY
1




JinYu                                          www.htsemi.com
semiconductor

                                                                                                               Date:2011/05
                                           2SA1 201
Typical Characteristics




  2




  JinYu                   www.htsemi.com
  semiconductor

                                                Date:2011/05



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