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2SA1 201
TRANSISTOR(PNP) SOT-89
1. BASE
FEATURES
High voltage
High transition frequency 2. COLLECTOR 1
Complementary to 2SC2881 2
3. EMITTER 3
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -120 V
VCEO Collector-Emitter Voltage -120 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.8 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -120 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-120V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
DC current gain hFE VCE=-5V,IC=-100mA 80 240
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1 V
Base-emitter voltage VBE VCE=-5V,IC=-500mA -1 V
Transition frequency fT VCE=-5V,IC=-100mA 120 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 30 pF
CLASSIFICATION OF hFE
Rank O Y
Range 80-160 120-240
Marking DO DY
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
2SA1 201
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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