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2sa1213


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                                                                                                            2SA1 21 3


    TRANSISTOR(PNP)                                                                      SOT-89-3L



                                                                                         1. BASE
    FEATURES
       Complementary to 2SC2873                                                          2. COLLECTOR

       Small Flat Package
                                                                                         3. EMITTER
       Power Amplifier and Switching Applications
       Low Saturation Voltage
       High Speed Switching Time


    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

        Symbol                            Parameter                          Value        Unit
         VCBO         Collector-Base Voltage                                     -50        V
         VCEO         Collector-Emitter Voltage                                  -50        V
         VEBO         Emitter-Base Voltage                                       -5         V
          IC          Collector Current                                          -2         A
          PC          Collector Power Dissipation                             500          mW
         RJA          Thermal Resistance From Junction To Ambient             250         /W
          Tj          Junction Temperature                                    150           
         Tstg         Storage Temperature                                  -55~+150         


    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
                 Parameter                            Symbol       Test     conditions       Min      Typ            Max         Unit
     Collector-base breakdown voltage                 V(BR)CBO   IC= -0.1mA,IE=0             -50                                  V
     Collector-emitter breakdown voltage              V(BR)CEO   IC=-10mA,IB=0               -50                                  V
     Emitter-base breakdown voltage                   V(BR)EBO   IE=-0.1mA,IC=0                 -5                                V
     Collector cut-off current                          ICBO     VCB=-50V,IE=0                                       -100        nA
     Emitter cut-off current                            IEBO     VEB=-5V,IC=0                                        -100        nA
                                                                 VCE=-2V, IC=-500mA             70                         240
     DC current gain                                    hFE
                                                                 VCE=-2V, IC=-2A                20
     Collector-emitter saturation voltage             VCE(sat)   IC=-1A,IB=-50mA                                       -0.5       V
     Base-emitter saturation voltage                  VBE(sat)   IC=-1A,IB=-50mA                                       -1.2       V
     Collector output capacitance                       Cob      VCB=-10V,IE=0, f=1MHz                40                         pF
     Transition frequency                                fT      VCE=-2V,IC= -0.5A           100                                 MHz


    CLASSIFICATION OF hFE
               RANK                            O                             Y
           RANGE                           70



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