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2sa1579


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                                                                                                   2SA1 57 9


TRANSISTOR(PNP)
                                                                                     SOT-323



                                                                                     1. BASE
FEATURES
                                                                                     2. EMITTER
    High breakdown voltage. (BVCEO = -120V)
                                                                                     3. COLLECTOR
    Complements the 2SC4102


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                    Parameter                    Value         Units
VCBO        Collector- Base Voltage                     -120           V
VCEO        Collector-Emitter Voltage                   -120           V
VEBO        Emitter-Base Voltage                         -5            V
IC          Collector Current -Continuous                -50          mA
PC          Collector Dissipation                       100           mW
TJ          Junction Temperature                        150            
Tstg        Storage Temperature                      -55-150           


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                        Symbol             Test   conditions     MIN           TYP   MAX    UNIT

 Collector-base breakdown voltage           V(BR)CBO      IC=-50A,IE=0               -120                        V

 Collector-emitter breakdown voltage        V(BR)CEO      IC=-1mA,IB=0               -120                        V

 Emitter-base breakdown voltage             V(BR)EBO      IE=-50A,IC=0                -5                         V

 Collector cut-off current                    ICBO        VCB=-100V,IE=0                                 -0.5   A

 Emitter cut-off current                      IEBO        VEB=-4V,IC=0                                   -0.5   A

 DC current gain                              hFE         VCE=-6V,IC=-2mA            180                 560

 Collector-emitter saturation voltage       VCE(sat)      IC=-10mA,IB=-1mA                               -0.5    V

 Transition frequency                          fT         VCE=-12V,IC=-2mA,f=30MHz                 140          MHz

 Collector output capacitance                 Cob         VCB=-12V,IE=0,f=1MHz                     3.2           pF



 CLASSIFICATION OF            hFE
 Rank                                               R                                          S

 Range                                       180-390                                    270-560

 Marking                                        RR                                          RS
     1




 JinYu                                      www.htsemi.com
 semiconductor
                                               2SA1 5 7 9
    Typical Characteristics




2




JinYu                         www.htsemi.com
semiconductor



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