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2sa1664


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                                                                                                           2SA1 664


TRANSISTOR(PNP)                                                                         SOT-89-3L



                                                                                        1. BASE
    FEATURES
       Small Flat Package                                                               2. COLLECTOR

       High Current Application
                                                                                        3. EMITTER
       High Transition Frequency


    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

      Symbol                             Parameter                          Value        Unit
        VCBO         Collector-Base Voltage                                     -35        V
        VCEO         Collector-Emitter Voltage                                  -30        V
        VEBO         Emitter-Base Voltage                                       -5         V
         IC          Collector Current                                       -0.8          A
         PC          Collector Power Dissipation                             500          mW
        RJA          Thermal Resistance From Junction To Ambient             250         /W
         Tj          Junction Temperature                                    150           
        Tstg         Storage Temperature                                  -55~+150         


    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                Parameter                            Symbol       Test     conditions       Min      Typ   Max             Unit
     Collector-base breakdown voltage                V(BR)CBO   IC=-1mA,IE=0                -35                             V
     Collector-emitter breakdown voltage             V(BR)CEO   IC=-10mA,IB=0               -30                             V
     Emitter-base breakdown voltage                  V(BR)EBO   IE=-1mA,IC=0                   -5                           V
     Collector cut-off current                         ICBO     VCB=-35V,IE=0                              -100            nA
     Emitter cut-off current                           IEBO     VEB=-5V,IC=0                               -100            nA
                                                      hFE(1)    VCE=-1V, IC=-100mA          100            320
     DC current gain
                                                      hFE(2)    VCE=-1V, IC=-700mA             35
     Collector-emitter saturation voltage            VCE(sat)   IC=-500mA,IB=-20mA                         -0.7             V
     Base-emitter voltage                              VBE      VCE=-1V, IC=-10mA           -0.5           -0.8             V
     Collector output capacitance                      Cob      VCB=-10V,IE=0, f=1MHz                19                    pF

     Transition frequency                               fT      VCE=-5V,IC=-10mA,                    120                   MHz


    CLASSIFICATION OF hFE(1)
              RANK                            O                             Y
          RANGE                          100



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