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2sa1662


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                                                                                                                 2SA1662

TRANSISTOR (PNP)

FEATURES
                                                                                   SOT-89
Complementary to KTC4374

                                                                                   1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted)

     Symbol            Parameter               Value       Units                   2. COLLECTOR         1
     VCBO     Collector-Base Voltage             -80         V                                              2
              Collector-Emitter Voltage          -80         V                     3. EMITTER
     VCEO                                                                                                         3
     VEBO     Emitter-Base Voltage               -5          V
     IC       Collector Current -Continuous     -0.4         A
     PC       Collector Power Dissipation        0.5        W
     TJ       Junction Temperature              150         
     Tstg     Storage Temperature             -55-150       



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                 Parameter                    Symbol               Test   conditions            MIN             TYP                 MAX    UNIT

 Collector-base breakdown voltage             V(BR)CBO    IC=-1mA,IE=0                          -80                                         V

 Collector-emitter breakdown voltage          V(BR)CEO    IC=-10mA,IB=0                         -80                                         V

 Emitter-base breakdown voltage               V(BR)EBO    IE=-1mA,IC=0                            -5                                        V

 Collector cut-off current                      ICBO      VCB=-80V,IE=0                                                             -0.1   A

 Emitter cut-off current                        IEBO      VEB=-5V,IC=0                                                              -0.1   A

                                               hFE(1)     VCE=-2V,IC=-50mA                        70                                240
 DC current gain
                                               hFE(2)     VCE=-2V,IC=-200mA                       40

 Collector-emitter saturation voltage         VCE(sat)    IC=-200mA,IB=-20mA                                                        -0.4    V

 Base-emitter voltage                           VBE       VCE=-2V,IC=-5mA                       -0.55                               -0.8    V

 Transition frequency                            fT       VCE=-10V,IC=-10mA                                     120                        MHz

 Collector output capacitance                   Cob       VCB=-10V,IE=0,f=1MHz                                  14                         pF


 CLASSIFICATION OF            hFE(1)
 Rank                                                 O                                                     Y
 Range                                          70-140                                             120-240
 Marking                                          FO                                                    FY




 1




 JinYu                                         www.htsemi.com
 semiconductor

                                                                                                                     Date:2011/05
                                           2SA1662
Typical Characteristics




 2




JinYu                     www.htsemi.com
semiconductor

                                           Date:2011/05



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