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2sa1873


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                                                                                                           2SA1873
DUAL TRANSISTOR (PNP+ PNP)

 Features
     Small package (dual type)                                                         SOT-353
     High voltage and high current
     High hFE
     Excellent hFE linearity
     Complementary to 2SC4944                                                                      1


 MARKING: SY SGR


 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

           Symbol                                  Parameter                            Value                   Units
 VCBO                  Collector-Base Voltage                                            -50                     V
 VCEO                  Collector-Emitter Voltage                                         -50                      V
 VEBO                  Emitter-Base Voltage                                               -5                      V
 IC                    Collector Current -Continuous                                     -150                    mA
 PC                    Collector Power Dissipation                                       200                     mW
 TJ                    Junction Temperature                                              150                      
    Tstg               Storage Temperature                                             -55 to150                  



 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                Parameter                          Symbol         Test   conditions        Min           Typ     M ax     Unit
    Collector-base breakdown voltage               V(BR)CBO     IC=-100A,IE=0              -50                             V
    Collector-emitter breakdown voltage            V(BR)CEO     IC=-1mA,IB=0               -50                             V
    Emitter-base breakdown voltage                 V(BR)EBO     IE=-10A,IC=0                -5                             V
    Collector cut-off current                        ICBO       VCB=-50V,IE=0                                   -0.1      A
    Emitter cut-off current                          IEBO       VEB=-5V,IC=0                                    -0.1      A
    DC current gain                                  hFE        VCE=-6V,IC=-2mA            120                  400
    Collector-emitter saturation voltage           VCE(sat)     IC=-100mA,IB=-10mA                              -0.3       V
    Transition frequency                              fT        VCE=-10V,IC=-1mA            80                           MHz
    Collector output capacitance                     Cob        VCB=-10V,IE=0,f=1MHz                             7        pF


    CLASSIFICATION OF           hFE
    Rank                                                   Y                                       GR

    Range                                            120-240                                     200-400

    Marking                                                SY                                      SGR




1
JinYu                                           www.htsemi.com
semiconductor

                                                                                                               Date:2011/ 05



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