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2sb624


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                                                                                                         2SB624



TRANSISTOR(PNP)

                                                                                             SOT-23
                                                                                             1.BASE
FEATURES                                                                                     2.EMITTER
                                                                                             3.COLLECTOR
        High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)
        Complimentary to 2SD596.


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                      Parameter                   Value       Units
VCBO            Collector-Base Voltage                    -30          V
VCEO            Collector-Emitter Voltage                 -25          V
VEBO            Emitter-Base Voltage                       -5          V
IC              Collector Current -Continuous            -700         mA
PD              Total Device Dissipation                 200         mW
TJ              Junction Temperature                     150          
Tstg            Storage Temperature                     -55-150       
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                Parameter                          Symbol           Test      conditions    MIN       TYP                  MAX     UNIT

      Collector-base breakdown voltage            V(BR)CBO        IC=-100A,      IE=0       -30                                      V

      Collector-emitter breakdown voltage         V(BR)CEO        IC= -1mA, IB=0            -25                                      V

      Emitter-base breakdown voltage              V(BR)EBO        IE= -100A, IC=0            -5                                      V

      Collector cut-off current                     ICBO          VCB=-30 V , IE=0                                         -0.1    A
      Emitter cut-off current                       IEBO          VEB= -5V ,     IC=0                                      -0.1    A
                                                   hFE(1)*        VCE= -1V,    IC= -100mA   110                            400
      DC current gain
                                                   hFE(2)*        VCE=-1V,     IC= -700mA    50

      Collector-emitter saturation voltage        VCE(sat) *      IC=-700 mA, IB= -70mA                                    -0.6      V

      Base-emitter voltage                        VBE*            VCE=-6V, IC=-10mA         -0.6                           -0.7      V

      Transition frequency                         fT             VCE= -6V,    IC= -10mA              160                          MHz

      Collector Output Capacitance                Cob             VCB=-6V,IE=0,f=1MHZ                 17                             pF


     * Pulse test : Pulse width 350s,Duty Cycle2%.

CLASSIFICATION OF hFE(1)
      Marking                          BV1               BV2                    BV3           BV4                            BV5
      Range                        110-180           135-220                  170-270       200-320                        250-400

 1




JinYu                                           www.htsemi.com
semiconductor

                                                                                                            Date:2011/05
                                 2SB624




2




JinYu           www.htsemi.com
semiconductor

                                   Date:201/5



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