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2sb709a


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                                                                                                      2SB7 09A



TRANSISTOR(PNP)
                                                                                       SOT-23


FEATURES
   For general amplification                                                           1. BASE
   Complementary to 2SD601A                                                            2. EMITTER
                                                                                       3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                    Parameter                  Value      Units
VCBO            Collector-Base Voltage                  -45        V
VCEO            Collector-Emitter Voltage               -45        V
VEBO            Emitter-Base Voltage                     -7        V
IC              Collector Current -Continuous           -100      mA
PC              Collector Power Dissipation             200       mW
TJ              Junction Temperature                    150        
Tstg            Storage Temperature                   -55-150      

     ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                 Parameter                                       Symbol        Test   conditions      MIN        MAX    UNIT

     Collector-base breakdown voltage                            V(BR)CBO    IC= -10 A, IE=0          -45                V

     Collector-emitter breakdown voltage                         V(BR)CEO    IC= -2mA, IB=0           -45                V

     Emitter-base breakdown voltage                              V(BR)EBO    IE= -10 A, IC=0          -7                 V

     Collector cut-off current                                     ICBO      VCB= -20 V, IE=0                    -0.1   A

     Collector cut-off current                                     ICEO      VCE= -10V, IB=0                     -100   A

     DC current gain                                               hFE       VCE= -10V,IC= -2mA       160        460

     Collector-emitter saturation voltage                        VCE(sat)    IC=-100 mA, IB= -10mA               -0.5    V

                                                                             VCE= -10V, IC= -1mA
     Transition frequency                                           fT                                60                MHz
                                                                             f=200MHz

                                                                             VCB= -10V, IE= 0
     Collector output capacitance                                  Cob                                           2.7    pF
                                                                             f=1MHz


     CLASSIFICATION OF             HFE
      Rank                                      Q                             R                              S
      Range                                   160-260                       210-340                        290-460
      Marking                                   BQ1                          BR1                            BS1
 1




JinYu                                                 www.htsemi.com
semiconductor
                                 2SB7 09A




2




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05
                                 2SB7 09A




3




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05



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