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2sb766


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                                                                                                                    2SB7 66



TRANSISTOR(PNP)
                                                                                             SOT-89

                                                                                             1. BASE
FEATURES
    Large collector power dissipation PC                                                     2. COLLECTOR       1
    Complementary to 2SD874                                                                                         2
                                                                                             3. EMITTER                   3
MAXIMUM RATINGS (TA=25 unless otherwise noted)

    Symbol                 Parameter                   Value        Units
VCBO           Collector-Base Voltage                      -30        V
VCEO           Collector-Emitter Voltage                   -25        V
VEBO           Emitter-Base Voltage                         -5        V
IC             Collector Current -Continuous                -1        A
PC             Collector Power Dissipation                 500       mW
TJ             Junction Temperature                        150        
Tstg           Storage Temperature                    -55-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                            Symbol                 Test     conditions             MIN       TYP                     MAX    UNIT

    Collector-base breakdown voltage               V(BR)CBO      IC =-10A, IE=0                           -30                                       V

    Collector-emitter breakdown voltage            V(BR)CEO      IC =-2mA, IB=0                           -25                                       V

    Emitter-base breakdown voltage                 V(BR)EBO      IE=-10A, IC=0                            -5                                        V

    Collector cut-off current                        ICBO        VCB=-20V, IE=0                                                             -0.1   A

    Emitter cut-off current                          IEBO        VEB=-4V, IC=0                                                              -0.1   A

                                                    hFE(1)       VCE=-10V, IC=-500mA                      85                                 340
    DC current gain
                                                    hFE(2)       VCE=-5V, IC=-1A                          50

    Collector-emitter saturation voltage           VCE(sat)      IC=-500mA, IB=-50mA                                -0.2                    -0.4    V

    Base-emitter saturation voltage                VBE(sat)      IC=-500mA, IB=-50mA                                -0.85                   -1.2    V

    Transition frequency                              fT         VCE=-10V, IC=-50mA, f=200MHz                       200                            MHz

    Collector output capacitance                     Cob         VCB=-10V, IE=0, f=1MHz                                 20                   30    pF


CLASSIFICATION OF               hFE(1)
    Rank                                       Q                                      R                                                 S

    Range                                  85-170                                  120-240                               170-340

    Marking                                  AQ                                      AR                                                 AS
1




JinYu                                              www.htsemi.com
semiconductor

                                                                                                                         Date:2011/05
                                           2SB7 66
Typical Characteristics




 2




 JinYu                    www.htsemi.com
semiconductor

                                             Date:2011/05



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