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2sb766a


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                                                                                                               2SB7 66A



 TRANSISTOR(PNP)
                                                                                        SOT-89


                                                                                        1. BASE

FEATURES
                                                                                        2. COLLECTOR       1
   Large collector power dissipation PC
   Complementary to 2SD874A                                                                                     2
                                                                                        3. EMITTER
                                                                                                                       3

MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol               Parameter                     Value      Units
VCBO         Collector-Base Voltage                  -60         V
VCEO         Collector-Emitter Voltage               -50         V
VEBO         Emitter-Base Voltage                     -5         V
IC           Collector Current -Continuous            -1         A
PC           Collector Power Dissipation             500        mW
TJ           Junction Temperature                    150         
Tstg         Storage Temperature                 -55-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                           Symbol        Test    conditions                 MIN          TYP                        MAX    UNIT
 Collector-base breakdown voltage                V(BR)CBO    Ic=-10A,IE=0                            -60                                          V
 Collector-emitter breakdown voltage             V(BR)CEO    Ic=-2mA,IB=0                            -50                                          V
 Emitter-base breakdown voltage                  V(BR)EBO    IE=-10A,IC=0                            -5                                           V
 Collector cut-off current                          ICBO     VCB=-20V,IE=0                                                                -0.1   A
 Emitter cut-off current                            IEBO     VEB=-4V,IC=0                                                                 -0.1   A
                                                    hFE(1)   VCE=-10V,IC=-500mA                      85                                   340
 DC current gain
                                                    hFE(2)   VCE=-5V,IC=-1A                          50

 Collector-emitter saturation voltage            VCE(sat)    IC=-500mA,IB=-50mA                                -0.2                       -0.4    V
 Base-emitter saturation voltage                 VBE(sat)    IC=-500mA,IB=-50mA                                -0.85                      -1.2    V
 Transition frequency                                 fT     VCE=-10V,IC=-50mA,f=200MHz                        200                               MHz
 Collector output capacitance                        Cob     VCB=-10V,IE=0,f=1MHz                               20                        30      pF


 CLASSIFICATION OF            hFE(1)
 Rank                                        Q                                      R                                                     S

 Range                                     85-170                             120-240                                  170-340

 MAKING                                     BQ                                  BR                                                 BS


     1




     JinYu                                          www.htsemi.com
     semiconductor

                                                                                                                           Date:2011/05
                                               2SB7 66A
    Typical Characteristics




2




JinYu                         www.htsemi.com
semiconductor

                                                Date:2011/05



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