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2sb1073


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                                                                                             2SB1 07 3


 TRANSISTOR



FEATURES
    Low collector-emitter saturation voltage VCE(sat)
    Large peak collector current IC

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                Parameter               Value       Units
VCBO         Collector-Base Voltage             -30         V

VCEO         Collector-Emitter Voltage          -20         V
VEBO         Emitter-Base Voltage               -7          V
IC           Collector Current -Continuous      -4          A
PC           Collector Power Dissipation        0.5        W
TJ           Junction Temperature              150         
Tstg         Storage Temperature              -55-150      

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                        Symbol       Test   conditions         MIN        TYP                  MAX    UNIT

 Collector-base breakdown voltage              V(BR)CBO   IC=-10A,IE=0                -30                                     V

 Collector-emitter breakdown voltage           V(BR)CEO   IC=-1mA,IB=0                -20                                     V

 Emitter-base breakdown voltage                V(BR)EBO   IE=-10A,IC=0                -7                                      V

 Collector cut-off current                       ICBO     VCB=-30V,IE=0                                               -0.1   A

 Emitter cut-off current                         IEBO     VEB=-7V,IC=0                                                -0.1   A

 DC current gain                                   hFE    VCE=-2V,IC=-2A              120                             315

 Collector-emitter saturation voltage          VCE(sat)   IC=-3A,IB=-100mA                                            -1      V

 Transition frequency                               fT    VCE=-6V,IC=-50mA,f=200MHz              120                         MHz

 Collector output capacitance                      Cob    VCB=-20V,IE=0,f=1MHz                   40                          pF


CLASSIFICATION OF              hFE
 Rank                                          Q                                            R

 Range                                       120-205                                   180-315

 Marking                                       IQ                                           IR


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     JinYu                                      www.htsemi.com
     semiconductor

                                                                                                       Date:2011/05
                                           2SB1 07 3
Typical Characteristics




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JinYu                     www.htsemi.com
semiconductor

                                             Date:2011/05



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