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2sb1132


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                                                                                                                     2SB1 1 32
TRANSISTOR (PNP)

FEATURES
   Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA                                                SOT-89
   Compliments 2SD1664
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                                1. BASE
     Symbol               Parameter                   Value         Units
     VCBO     Collector-Base Voltage                      -40            V
                                                                                              2. COLLECTOR       1
     VCEO     Collector-Emitter Voltage                   -32            V                                           2
                                                                                              3. EMITTER                  3
     VEBO     Emitter-Base Voltage                         -5            V
     IC       Collector Current -Continuous                -1            A
     PC       Collector Power Dissipation                 500        mW
     TJ       Junction Temperature                        150            
     Tstg     Storage Temperature                    -55-150             


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                           Symbol          Test       conditions                    MIN       TYP                         MAX    UNIT

 Collector-base breakdown voltage                 V(BR)CBO      IC=-50A,IE=0                               -40                                           V

 Collector-emitter breakdown voltage              V(BR)CEO      IC=-1mA,IB=0                               -32                                           V

 Emitter-base breakdown voltage                   V(BR)EBO      IE=-50A,IC=0                               -5                                            V

 Collector cut-off current                          ICBO        VCB=-20V,IE=0                                                                    -0.5   A

 Emitter cut-off current                            IEBO        VEB=-4V,IC=0                                                                     -0.5   A

 DC current gain                                    hFE         VCE=-3V,IC=-100mA                          82                                    390

 Collector-emitter saturation voltage             VCE(sat)      IC=-500mA,IB=-50mA                                   -0.2                        -0.5    V

 Transition frequency                                fT         VCE=-5V,IC=-50mA,f=30MHz                             150                                MHz

 Collector output capacitance                       Cob         VCB=-10V,IE=0,f=1MHz                                     20                      30      pF

CLASSIFICATION OF hFE
 Rank                                         P                                           Q                                                  R

 Range                                    82-180                                   120-270                                180-390

 Marking                                    BAP                                      BAQ                                            BAR




 1




 JinYu                                             www.htsemi.com
 semiconductor

                                                                                                                              Date:2011/05
                                           2SB1 1 32

Typical Characteristics




   2




  JinYu                   www.htsemi.com
  semiconductor

                                                Date:2011/05
                                 2SB1 1 32




3




JinYu           www.htsemi.com
semiconductor

                                    Date:2011/05



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