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2sb1188


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                                                                                                                   2SB1 1 8 8


    TRANSISTOR(PNP)
                                                                                       SOT-89


FEATURES                                                                               1. BASE


         Low VCE(sat).                                                                            1
                                                                                       2. COLLECTOR
          Complements the 2SD1766                                                                     2
                                                                                       3. EMITTER              3
MAXIMUM RATINGS (TA=25 unless otherwise noted)
    Symbol                  Parameter                    Value        Units
VCBO            Collector-Base   Voltage                   -40         V
VCEO            Collector-Emitter Voltage                  -32         V
VEBO            Emitter-Base Voltage                       -5          V
IC              Collector Current -Continuous              -2          A
PC              Collector Power Dissipation               500         mW
TJ              Junction Temperature                      150          
Tstg            Storage Temperature                      -55-150       
    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                 Parameter                                 Symbol             Test     conditions     MIN           TYP                 MAX    UNIT

     Collector-base breakdown voltage                      V(BR)CBO    IC=-50A , IE=0                 -40                                       V

     Collector-emitter breakdown voltage                   V(BR)CEO    IC= -1mA , IB=0                -32                                       V

     Emitter-base breakdown voltage                        V(BR)EBO    IE=-50A, IC=0                      -5                                    V

     Collector cut-off current                               ICBO      VCB=-20 V , IE=0                                                 -1     A

     Emitter cut-off current                                 IEBO      VEB=-4 V ,     IC=0                                              -1     A

     DC current gain *                                       hFE       VCE=-3V,     IC= -0.5A         82                                390

     Collector-emitter saturation voltage *                VCE(sat)    IC=-2A, IB= -0.2A                                                -0.8    V

     Transition frequency                                        fT    VCE=-5V, IC=-0.5A ,f=30MHz                   100                        MHz

     Output capacitance                                      Cob       VCB=-10V, IE=0 ,f=1MHz                        50                         pF

    * Measured using pulse current.
    CLASSIFICATION            OF       hFE
     Rank                                         P                                  Q                                              R
     Range                                      82-180                            120-270                           180-390
     Marking                                    BCP                                 BCQ                                 BCR

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JinYu                                                 www.htsemi.com
semiconductor

                                                                                                                     Date:2011/05
                                          2SB1 1 8 8
    Typical Characteristics




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JinYu                    www.htsemi.com



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