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2sb1197


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                                                                                                            2SB1 1 97


TRANSISTOR(PNP)
                                                                                               SOT-23


                                                                                               1. BASE                 Unit : mm

FEATURES                                                                                       2. EMITTER

   Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA)                                         3. COLLECTOR

   IC =-0.8A.
   Complements the 2SD1781.


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                         Parameter                   Value        Units
VCBO               Collector- Base Voltage                   -40           V
VCEO               Collector-Emitter Voltage                 -32           V
VEBO               Emitter-Base Voltage                          -5        V
IC                 Collector Current -Continuous             -0.8          A
PC                 Collector Power Dissipation               200         mW
TJ                 Junction Temperature                      150          
Tstg               Storage Temperature                     -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                   Parameter                             Symbol         Test     conditions   MIN           TYP                   MAX      UNIT

         Collector-base breakdown voltage                V(BR)CBO     IC =-50A,     IE=0      -40                                          V

         Collector-emitter breakdown voltage             V(BR)CEO     IC = -1mA, IB=0         -32                                          V

         Emitter-base breakdown voltage                  V(BR)EBO     IE= -50A, IC=0           -5                                          V

         Collector cut-off current                         ICBO       VCB=-20V,IE=0                                               -0.5     A
         Emitter cut-off current                           IEBO       VEB= -4V,IC=0                                               -0.5     A
         DC current gain                                   hFE        VCE=-3V,IC= -100mA      82                                  390

         Collector-emitter saturation voltage           VCE(sat)      IC=-500 mA, IB= -50mA                                       -0.5     V
                                                                      VCE=-5V, IC= -50mA,
         Transition frequency                               fT                                 50           200                            MHz
                                                                      f=100MHz
         Collector output capacitance                      Cob        VCB=-10V,IE=0,f=1MHz                  12                        30    pF


CLASSIFICATION OF hFE
         Rank                                      P                                  Q                                           R
         Range                                 82-180                             120-270                         180-390
         Marking                                 AHP                               AHQ                             AHR


     1




     JinYu                                             www.htsemi.com
     semiconductor

                                                                                                                   Date:2011/05
                                     2SB1 1 97

TYPICAL CHARACTERISTICS                 2SB1197




 2




 JinYu              www.htsemi.com
 semiconductor

                                         Date:2011/05



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