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2sb1260


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                                                                                                               2SB1 260


    TRANSISTOR(PNP)                                                                         SOT-89-3L



                                                                                            1. BASE
    FEATURES
       Power Transistor                                                                     2. COLLECTOR

       High Voltage and Current
                                                                                            3. EMITTER
       Low Collector-emitter saturation voltage
       Complements the 2SD1898


    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

         Symbol                              Parameter                         Value         Unit
           VCBO         Collector-Base Voltage                                  -80            V
           VCEO         Collector-Emitter Voltage                               -80            V
           VEBO         Emitter-Base Voltage                                       -5          V
            IC          Collector Current                                          -1          A
            PC          Collector Power Dissipation                             500           mW
           RJA          Thermal Resistance From Junction To Ambient             250          /W
            Tj          Junction Temperature                                    150            
           Tstg         Storage Temperature                                   -55~+150         


    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                   Parameter                             Symbol       Test    conditions        Min      Typ                  Max    Unit
        Collector-base breakdown voltage                 V(BR)CBO   IC=-50



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