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                                                                                                               2SB1 308

    TRANSISTOR                                                                              SOT-89-3L

                                                                                            1. BASE
       Power Transistor                                                                     2. COLLECTOR

       Excellent DC current Gain
                                                                                            3. EMITTER
       Low Collector-emitter Saturation Voltage

    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

         Symbol                              Parameter                         Value         Unit
           VCBO         Collector-Base Voltage                                  -30            V
           VCEO         Collector-Emitter Voltage                               -20            V
           VEBO         Emitter-Base Voltage                                       -6          V
            IC          Collector Current                                          -3          A
            PC          Collector Power Dissipation                             500           mW
           RJA          Thermal Resistance From Junction To Ambient             250          /W
            Tj          Junction Temperature                                    150            
           Tstg         Storage Temperature                                   -55~+150         

    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                   Parameter                             Symbol       Test    conditions        Min      Typ                  Max     Unit
        Collector-base breakdown voltage                 V(BR)CBO   IC=-50

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