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2sb1386


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                                                                                                 2SB1 38 6



         TRANSISTOR(PNP)



    FEATURES
       Low collector saturation voltage,
       Execllent current-to-gain characteristics


    MAXIMUM RATINGS (TA=25 unless otherwise noted)

    Symbol              Parameter                        Value           Units
    VCBO      Collector-Base Voltage                      -30              V

    VCEO      Collector-Emitter Voltage                   -20              V
    VEBO      Emitter-Base Voltage                        -6               V
    IC        Collector Current -Continuous               -5               A
    PC        Collector Power Dissipation                 0.5             W
    TJ        Junction Temperature                       150              
    Tstg      Storage Temperature                    -55-150              

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                        Symbol            Test   conditions        MIN   TYP                 MAX      UNIT

     Collector-base breakdown voltage           V(BR)CBO        IC=-50A,IE=0               -30                                 V

     Collector-emitter breakdown voltage        V(BR)CEO        IC=-1mA,IB=0               -20                                 V

     Emitter-base breakdown voltage             V(BR)EBO        IE=-50A,IC=0               -6                                  V

     Collector cut-off current                    ICBO          VCB=-20V,IE=0                                          -0.5   A

     Emitter cut-off current                      IEBO          VEB=-5V,IC=0                                           -0.5   A

     DC current gain                               hFE          VCE=-2V,IC=-500mA          82                          390

     Collector-emitter saturation voltage        VCE(sat)       IC=-4A,IB=-100mA                                       -1      V

     Transition frequency                           fT          VCE=-6V,IC=-50mA,f=30MHz         120                          MHz

     Collector output capacitance                  Cob          VCB=-20V,IE=0,f=1MHz             60                           pF


     CLASSIFICATION OF           hFE
     Rank                                  P                                     Q                               R

     Range                             82-180                                  120-270            180-390

     Marking                              BHP                                   BHQ                              BHR


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JinYu                                           www.htsemi.com
semiconductor

                                                                                                  Date:2011/05
                                           2SB1 38 6

Typical Characteristics




 2




JinYu                     www.htsemi.com
semiconductor

                                              Date:2011/05
                                 2SB1 38 6




3




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05



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