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                                                                                                               2SB1 440


TRANSISTOR(PNP)
                                                                                        SOT-89

                                                                                        1. BASE
FEATURES
    Low collector-emitter saturation voltage VCE(sat)
    For low-frequency output amplification                                              2. COLLECTOR       1
    Complementary to 2SD2185                                                                                   2
                                                                                        3. EMITTER                       3
MAXIMUM RATINGS (TA=25 unless otherwise noted)

    Symbol                    Parameter                    Value     Units
VCBO           Collector-Base Voltage                       -50        V
VCEO           Collector-Emitter Voltage                    -50        V
VEBO           Emitter-Base Voltage                         -5         V
IC             Collector Current -Continuous                -2         A
PC             Collector Power Dissipation                 500       mW
TJ             Junction Temperature                        150        
Tstg           Storage Temperature                      -55-150       

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                        Symbol               Test       conditions            MIN           TYP             MAX     UNIT

    Collector-base breakdown voltage           V(BR)CBO      IC=-10A, IE=0                           -50                                    V

    Collector-emitter breakdown voltage        V(BR)CEO      IC=-1mA, IB=0                           -50                                    V

    Emitter-base breakdown voltage             V(BR)EBO      IE=-10A, IC=0                           -5                                     V

    Collector cut-off current                    ICBO        VCB=-50V, IE=0                                                         -1     A

    Emitter cut-off current                      IEBO        VEB=-5V, IC=0                                                          -1     A

                                                hFE1         VCE=-2V, IC=-200mA                      120                           340
    DC current gain
                                                hFE2         VCE=-2V, IC=-1A                         60

    Collector-emitter saturation voltage       VCE(sat)      IC=-1A, IB=-50mA                                                      -0.3     V

    Base- emitter saturation voltage           VBE(sat)      IC=-1A, IB=-50mA                                                      -1..2    V

    Transition frequency                          fT         VCE=-10V, IC=50mA, f=200MHz                           80                      MHz

    Collector output capacitance                 Cob         VCB=-10V, IE=0, f=1MHz                                                 60     pF

CLASSIFICATION OF               hFE1
    Rank                                               R                                                       S

    Range                                        120-240                                                  170-340

    Marking                                                                       1L

1




JinYu                                          www.htsemi.com
semiconductor
                                                                                                                    Date:2011/05
                                           2SB1 440
Typical Characteristics




 2




JinYu                     www.htsemi.com
semiconductor

                                            Date:2011/05

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