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                                                                                                                2SC4081

 TRANSISTOR (NPN)
                                                                                                 SOT-323
FEATURES
      Excellent hFE linearity
     Complements the 2A1576A
                                                                                                 1. BASE
                                                                                                 2. EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                                   3. COLLECTOR

  Symbol                   Parameter                     Value            Units
  VCBO        Collector-Base Voltage                       60              V
  VCEO        Collector-Emitter Voltage                    50              V
  VEBO        Emitter-Base Voltage                          7              V
  IC          Collector Current -Continuous               150             mA
  PC          Collector Power Dissipation                 200             mW
  TJ          Junction Temperature                        150              
  Tstg        Storage Temperature                    -55-150               


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                             Symbol            Test    conditions       MIN      TYP      MAX       UNIT

 Collector-base breakdown voltage                V(BR)CBO        IC=50A,IE=0                60                           V

 Collector-emitter breakdown voltage             V(BR)CEO        IC=1mA,IB=0                50                           V

 Emitter-base breakdown voltage                  V(BR)EBO        IE=50A,IC=0                 7                           V

 Collector cut-off current                         ICBO          VCB=60V,IE=0                                 0.1       A

 Emitter cut-off current                           IEBO          VEB=7V,IC=0                                  0.1       A

 DC current gain                                  hFE(1)         VCE=6V,IC=1mA              120               560

 Collector-emitter saturation voltage            VCE(sat)        IC=50mA,IB=5mA                               0.4        V

 Transition frequency                               fT           VCE=12V,IC=2mA,f=30MHz              180                MHz

 Collector output capacitance                      Cob           VCB12V,IE=0,f=1MHz                           3.5        pF



CLASSIFICATION OF            hFE(1)
 Rank                                       Q                                           R                           S
 Range                                  120-270                                   180-390                     270-560
 Marking                                    BQ                                      BR                          BS




JinYu                                           www.htsemi.com
semiconductor
                                 2SC4081




JinYu           www.htsemi.com
semiconductor



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