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TRANSISTOR (NPN)
SOT-323
FEATURES
Excellent hFE linearity
Complements the 2A1576A
1. BASE
2. EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 7 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=7V,IC=0 0.1 A
DC current gain hFE(1) VCE=6V,IC=1mA 120 560
Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.4 V
Transition frequency fT VCE=12V,IC=2mA,f=30MHz 180 MHz
Collector output capacitance Cob VCB12V,IE=0,f=1MHz 3.5 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 120-270 180-390 270-560
Marking BQ BR BS
JinYu www.htsemi.com
semiconductor
2SC4081
JinYu www.htsemi.com
semiconductor
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