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                                                                                                                   2SC4097


    TRANSISTOR (NPN)
                                                                                             SOT-323

FEATURES                                                                                                            3
   High ICMax. ICMax=0.5A                                                                          1
   Low VCE(sat).Optimal for low voltage operation.                                                        2
   Complements the 2SA1577
                                                                                             1. BASE
                                                                                             2. EMITTER
MAXIMUM RATINGS (TA=25unless otherwise noted)                                                3. COLLECTOR

    Symbol              Parameter                    Value         Units
VCBO          Collector-Base Voltage                     40          V
VCEO          Collector-Emitter Voltage                  32          V
VEBO          Emitter-Base Voltage                        5          V
IC            Collector Current -Continuous              500        mA
PC            Collector Power Dissipation                200        mW
TJ            Junction Temperature                       150         
Tstg          Storage Temperature                   -55-150          



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                       Symbol                     Test   conditions       MIN          TYP           MAX   UNIT
    Collector-base breakdown voltage           V(BR)CBO        IC=100A,IE=0                       40                               V
    Collector-emitter breakdown voltage        V(BR)CEO        IC=1mA,IB=0                        32                               V
    Emitter-base breakdown voltage             V(BR)EBO        IE=100A,IC=0                       5                                V
    Collector cut-off current                      ICBO        VCB=20V,IE=0                                                  1    A
    Emitter cut-off current                        IEBO        VEB=4V,IC=0                                                   1    A
    DC current gain                                hFE         VCE=3V,IC=10mA                     82                        390
    Collector-emitter saturation voltage       VCE(sat)        IC=500mA, IB=50mA                                            0.4    V
    Transition frequency                            fT         VCE=5V, IC=20mA,f =100MHz                      250                 MHz

    Collector Output Capacitance                   Cob         VCB=10V,IE=0,f=1MHZ                             6                  pF


CLASSIFICATION OF          hFE

    Rank                                      P                                      Q                                  R

    Range                                   82-180                                120-270                          180-390

    MARKING                                   CP                                    CQ                               CR




1




JinYu                                             www.htsemi.com
semiconductor

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