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TRANSISTOR (NPN)
SOT-89
FEATURES
Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE
1
Excellent current gain characteristics.
2
Complements to 2SA1585 2. COLLECTOR
3
MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 50A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 6 V
Collector cut-off current ICBO VCB=30V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE VCE=2V, IC= 0.1A 120 560
Collector-emitter saturation voltage* VCEsat IC= 2A, IB=0.1A 0.5 V
VCE=2V, IC=0.5 A
Transition frequency fT 200 290 MHz
F=100MHz
*pulse test
CLASSIFICATION OF hFE
Rank Q R S
Range 120-270 180-390 270-560
marking 4115Q 4115R 4115S
JinYu www.htsemi.com
semiconductor
2SC4115
JinYu www.htsemi.com
semiconductor
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