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                                                                                                                          2SC4115

     TRANSISTOR (NPN)
                                                                                          SOT-89
FEATURES
   Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)                               1. BASE
                                                                                                             1
   Excellent current gain characteristics.
                                                                                                                 2
   Complements to 2SA1585                                                                 2. COLLECTOR
                                                                                                                      3
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                            3. EMITTER

 Symbol                     Parameter                           Value           Units
VCBO           Collector-Base Voltage                             40              V
VCEO           Collector-Emitter Voltage                          20              V
VEBO           Emitter-Base Voltage                               6               V
IC             Collector Current -Continuous                      3               A
PC             Collector Power Dissipation                       500             mW
TJ             Junction Temperature                              150              
Tstg           Storage Temperature                              -55-150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                             Symbol         Test     conditions   MIN       TYP              MAX    UNIT

 Collector-base breakdown voltage                    V(BR)CBO           IC= 50A, IE=0     40                                  V

 Collector-emitter breakdown voltage                 V(BR)CEO           IC=1mA , IB=0     20                                  V

 Emitter-base breakdown voltage                      V(BR)EBO           IE=50A, IC=0       6                                  V

 Collector cut-off current                             ICBO             VCB=30V, IE=0                                0.1     A

 Emitter cut-off current                               IEBO             VEB= 5V, IC=0                                0.1     A

 DC current gain                                       hFE             VCE=2V, IC= 0.1A   120                        560

 Collector-emitter saturation voltage*                VCEsat           IC= 2A, IB=0.1A                               0.5      V

                                                                       VCE=2V, IC=0.5 A
 Transition frequency                                   fT                                200          290                   MHz
                                                                         F=100MHz
 *pulse test

CLASSIFICATION OF hFE
     Rank                                    Q                                   R                                   S

     Range                                 120-270                            180-390                            270-560

 marking                                   4115Q                               4115R                             4115S




JinYu                                              www.htsemi.com
semiconductor
                                 2SC4115




JinYu           www.htsemi.com
semiconductor



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