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TRANSISTOR (NPN)
FEATURES SOT-323
High voltage and high current
Excellent hFE linearity
High hFE
Low noise
Complementary to 2SA1586 1. BASE
2. EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)
3. COLLECTOR
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 100 mW
TJ Junction Temperature 150
Tstg Junction and Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE VCE=6V,IC=2mA 70 700
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.25 V
Transition frequency fT VCE=10V,IC=1mA, 80 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.5 pF
VCE=6V,Ic=0.1mA,
Noise figure NF 10 dB
f=1KHZ,Rg=10K
CLASSIFICATION OF hFE
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Marking LO LY LG LL
JinYu www.htsemi.com
semiconductor
2SC4116
JinYu www.htsemi.com
semiconductor
2SC4116
JinYu www.htsemi.com
semiconductor
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