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                                                                                                                       2SC4116

  TRANSISTOR (NPN)
 FEATURES                                                                                             SOT-323
    High voltage and high current
    Excellent hFE linearity
    High hFE
    Low noise
    Complementary to 2SA1586                                                                          1. BASE
                                                                                                      2. EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                      3. COLLECTOR

   Symbol                      Parameter                      Value       Units
   VCBO           Collector-Base Voltage                       60            V
   VCEO           Collector-Emitter Voltage                    50            V
   VEBO           Emitter-Base Voltage                         5             V
   IC             Collector Current -Continuous               150            mA
   PC             Collector Power Dissipation                 100            mW
   TJ             Junction Temperature                        150            
   Tstg           Junction and Storage Temperature          -55-150          


   ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                            Symbol              Test    conditions      MIN          TYP       MAX         UNIT
   Collector-base breakdown voltage               V(BR)CBO         IC=100A,IE=0                60                                 V
   Collector-emitter breakdown voltage            V(BR)CEO         IC=1mA,IB=0                 50                                 V
   Emitter-base breakdown voltage                 V(BR)EBO         IE=100A,IC=0                   5                               V
   Collector cut-off current                        ICBO           VCB=60V,IE=0                                      0.1         A
   Emitter cut-off current                           IEBO          VEB=5V,IC=0                                       0.1         A
   DC current gain                                   hFE           VCE=6V,IC=2mA               70                    700
   Collector-emitter saturation voltage            VCE(sat)        IC=100mA,IB=10mA                                  0.25         V
   Transition frequency                               fT           VCE=10V,IC=1mA,             80                                MHz
   Collector output capacitance                      Cob           VCB=10V,IE=0,f=1MHz                               3.5         pF
                                                                   VCE=6V,Ic=0.1mA,
   Noise figure                                      NF                                                              10          dB
                                                                   f=1KHZ,Rg=10K


   CLASSIFICATION OF hFE
    Rank                                 O                          Y                        GR                            BL
    Range                           70-140                      120-240                    200-400                    350-700
   Marking                            LO                            LY                       LG                             LL




JinYu                                           www.htsemi.com
semiconductor
                                 2SC4116




JinYu           www.htsemi.com
semiconductor
                                 2SC4116




JinYu           www.htsemi.com
semiconductor



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