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                                                                                                                   2SC4215

   TRANSISTOR (NPN)                                                                          SOT-323

 FEATURES
    Small reverse transfer capacitance: Cre= 0.55pF(typ.)
    Low noise figure: NF=2dB (typ.) (f=100 MHz)
                                                                                             1. BASE
                                                                                             2. EMITTER
 MAXIMUM RATINGS (TA=25 unless otherwise noted)                                              3. COLLECTOR

    Symbol                 Parameter                      Value       Units
    VCBO        Collector-Base Voltage                      40          V
    VCEO        Collector-Emitter Voltage                   30          V
    VEBO        Emitter-Base Voltage                        4           V
    IC          Collector Current -Continuous               20         mA
    PC          Collector Power Dissipation               100          mW
    TJ          Junction Temperature                      150           
    Tstg        Storage Temperature                      -55-150        



 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                             Symbol              Test      conditions   MIN    TYP       MAX     UNIT
 Collector-base breakdown voltage                V(BR)CBO        IC=100A,IE=0               40                        V
 Collector-emitter breakdown voltage             V(BR)CEO        IC=1mA,IB=0                30                        V
 Emitter-base breakdown voltage                  V(BR)EBO        IE=100A,IC=0                4                        V
 Collector cut-off current                         ICBO          VCB=40V,IE=0                                 0.1     A
 Emitter cut-off current                           IEBO          VEB=4V,IC=0                                  0.5     A
 DC current gain                                   hFE           VCE=6V,IC=1mA              40               200
 Collector-base time constant                    Cc.rbb          VCE=6V,IC=1mA, f=30MHZ                       25      ps
 Transition frequency                               fT           VCE=6V,IC=1mA,             260    550               MHz
 Reverse transfer capacitance                      Cre           VCB=10V,f=1MHz                    0.55               pF

 Noise figure                                      NF                                                  2       5      dB
                                                                 VCC=6V,Ic=1mA,f=100MHZ
 Power gain                                       Gpe                                       17     23                 dB



 CLASSIFICATION OF hFE
  Rank                                      R                                     O                          Y
  Range                                  40-80                                  70-140                     100-200
 Marking                                  QR                                      QO                         QY




JinYu                                            www.htsemi.com
semiconductor
                                 2SC4215




JinYu           www.htsemi.com
semiconductor
                                 2SC4215




JinYu           www.htsemi.com
semiconductor



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