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SOT-89-3L
TRANSISTOR(NPN)
1. BASE
FEATURES
Small Flat Package 2. COLLECTOR
High Breakdown Voltage
3. EMITTER
Excellent hFE Linearity
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 200 mA
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10
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