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                                                                                                         2SC4944
 DUAL TRANSISTOR (NPN+ NPN)


                                                                                      SOT-353
 Features
     Small package (dual type)
     High voltage and high current
     High hFE, excellent hFE linearity
                                                                                                   1
     Complementary to 2SA1873

 Marking: LY LGR




 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

        Symbol                                     Parameter                           Value                      Units

 VCBO                  Collector-Base Voltage                                            60                         V

 VCEO                  Collector-Emitter Voltage                                         50                         V
 VEBO                  Emitter-Base Voltage                                              5                          V
 IC                    Collector Current -Continuous                                    150                        mA
 PC                    Collector Power Dissipation                                      200                       mW
 TJ                    Junction Temperature                                             150                         
 Tstg                  Storage Temperature                                            -55 to150                     

 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

              Parameter                            Symbol         Test   conditions       Min            Typ      Max          Unit
    Collector-base breakdown voltage               V(BR)CBO     IC=100A,IE=0                 60                                V
    Collector-emitter breakdown voltage            V(BR)CEO     IC=1mA,IB=0                  50                                V
    Emitter-base breakdown voltage                 V(BR)EBO     IE=100A,IC=0                  5                                V
    Collector cut-off current                        ICBO       VCB=60V,IE=0                                      0.1          A
    Emitter cut-off current                          IEBO       VEB=5V,IC=0                                       0.1          A
    DC current gain                                  hFE        VCE=6V,IC=2mA             120                    400
    Collector-emitter saturation voltage           VCE(sat)     IC=100mA,IB=10mA                                 0.25          V
    Transition frequency                              fT        VCE=10V,IC=1mA               80                            MHz
    Collector output capacitance                     Cob        VCB=10V,IE=0,f=1MHz                               3.5          pF


    CLASSIFICATION OF           hFE
    Rank                                                   Y                                        GR

    Range                                            120-240                                      200-400

    Marking                                                LY                                      LGR




1
JinYu                                           www.htsemi.com
semiconductor

                                                                                                               Date:2011/ 05

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