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                                                                                                                2SC2411



 TRANSISOR(NPN)                                                                           SOT-23

                                                                                          1. BASE
FEATURES                                                                                  2. EMITTER
         High ICMax.ICMax. = 0.5mA                                                        3. COLLECTOR
          Low VCE(sat).Optimal for low voltage operation.
          Complements the 2SA1036

MAXIMUM RATINGS (TA=25 unless otherwise noted)
   Symbol              Parameter                 Value          Units
  VCBO          Collector-Base Voltage              40           V
  VCEO          Collector-Emitter Voltage           32           V
  VEBO          Emitter-Base Voltage                5            V
  IC            Collector Current                   500         mA
  PC            Collector Power Dissipation         200         mW
  TJ            Junction Temperature                150          
  Tstg          Storage Temperature             -55-150          


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                              Symbol        Test   conditions                 MIN   TYP       MAX   UNIT

 Collector-base breakdown voltage                   V(BR)CBO    IC=100A,IE=0                        40                     V

 Collector-emitter breakdown voltage                V(BR)CEO    IC=1mA,IB=0                         32                     V

 Emitter-base breakdown voltage                     V(BR)EBO    IE=100A,IC=0                         5                     V

 Collector cut-off current                              ICBO    VCB=20V,IE=0                                         1    A

 Emitter cut-off current                                IEBO    VEB=4V,IC=0                                          1    A

 DC current gain                                        hFE     VCE=3V,IC=100mA                     82              390

 Collector-emitter saturation voltage                VCE(sat)   IC=500mA,IB=50mA                                    0.4    V

 Transition frequency                                     fT    VCE=5V,IC=20mA,f=100MHz                   250             MHz

 Collector output capacitance                           Cob     VCB=10V,IE=0,f=1MHz                       6.0              pF



 CLASSIFICATION OF              hFE
 Rank                                           P                                     Q                         R

 Range                                        82-180                           120-270                     180-390

 Marking                                       CP                                 CQ                            CR




JinYu                                               www.htsemi.com
semiconductor
                                 2SC2411




JinYu           www.htsemi.com
semiconductor



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