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TRANSISOR(NPN) SOT-23
1. BASE
FEATURES 2. EMITTER
High ICMax.ICMax. = 0.5mA 3. COLLECTOR
Low VCE(sat).Optimal for low voltage operation.
Complements the 2SA1036
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 32 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=20V,IE=0 1 A
Emitter cut-off current IEBO VEB=4V,IC=0 1 A
DC current gain hFE VCE=3V,IC=100mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V
Transition frequency fT VCE=5V,IC=20mA,f=100MHz 250 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6.0 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking CP CQ CR
JinYu www.htsemi.com
semiconductor
2SC2411
JinYu www.htsemi.com
semiconductor
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