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                                                                                                                 2SC2714


TRANSISTOR (NPN)                                                                                  SOT-23


                                                                                                  1. BASE
FEATURES
                                                                                                  2. EMITTER
     Small reverse Transfer Capacitance:Cre=0.7pF(typ.)                                           3. COLLECTOR
     Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)

     MAXIMUM RATINGS (TA=25 unless otherwise noted)

      Symbol                  Parameter                      Value          Units
     VCBO          Collector-Base Voltage                     40             V
     VCEO          Collector-Emitter Voltage                  30             V
     VEBO          Emitter-Base Voltage                        4             V
     IC            Collector Current -Continuous              20            mA
     PC            Collector Power Dissipation               100            mW
     Tj            Junction Temperature                      125             
     Tstg          Storage Temperature                  -55-+125             

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                            Symbol           Test     conditions     MIN       TYP       MAX     UNIT

    Collector-base breakdown voltage                V(BR)CBO       IC=10A,IE=0               40                           V

    Collector-emitter breakdown voltage             V(BR)CEO       IC=1mA,IB=0               30                           V

    Emitter-base breakdown voltage                  V(BR)EBO       IE=10A,IC=0                4                           V

    Collector cut-off current                         ICBO         VCB=18V,IE=0                                    0.5   A

    Emitter cut-off current                           IEBO         VEB=4V,IC=0                                     0.5   A

    DC current gain                                   hFE          VCE=6V,IC=1mA             40                    200

    Transition frequency                               fT          VCE=6V,IC=1mA                       550               MHz

    Reverse Transfer capacitance                      Cre          VCB=6V,IE=0,f=1MHz                  0.7                pF

    Noise figure                                      NF           VCE=6V,Ic=1mA,f=100MHZ              2.5          5    dB



CLASSIFICATION OF               hFE
    Rank                                       R                                      O                        Y
    Range                                   40-80                                   70-140                  100-200
    Marking                                  QR                                      QO                        QY



1




JinYu                                               www.htsemi.com
semiconductor
Typical Characteristics                    2SC2714




2




JinYu                     www.htsemi.com
semiconductor
3




JinYu           www.htsemi.com
semiconductor

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