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                                                                                                         2SC3052

TRANSISTOR (NPN)
                                                                                    SOT-23
FEATURES

    Low collector to emitter saturation voltage
    VCE(sat)=0.3V max(@IC=100mA,IB=10mA)                                            1. BASE
    Excellent linearity of DC forward current gain                                  2. EMITTER
                                                                                    3. COLLECTOR


MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                Parameter               Value        Units
 VCBO       Collector- Base Voltage              50          V
 VCEO       Collector-Emitter Voltage            50          V
 VEBO       Emitter-Base Voltage                 6           V
   IC       Collector Current -Continuous       0.2          A
  PC        Collector Power Dissipation         150         mW
  TJ        Junction Temperature                125          
  Tstg      Storage Temperature              -55-125         

ELECTRICAL CHARACTERISTICS (Tamb=25                          unless       otherwise specified)
            Parameter                       Symbol                 Test      conditions            MIN        MAX   UNIT

 Collector-base breakdown voltage           V (BR) CBO   IC = 100 A,      IE=0                     50                V
 Collector-emitter breakdown voltage        V (BR) CEO   IC = 100 A, IB=0                          50                V
 Emitter-base breakdown voltage             V (BR) EBO   IE= 100 A, IC=0                            6                V
 Collector cut-off current                     ICBO      VCB= 50 V , IE=0                                     0.1   A
 Emitter cut-off current                       IEBO      VEB= 6V , IC=0                                       0.1   A
                                               hFE(1)    VCE= 6V, IC= 1mA                          150        800
 DC current gain
                                              hFE(2)     VCE= 6V, IC= 0.1mA                        50
 Collector-emitter saturation voltage        VCE (sat)   IC=100mA, IB= 10mA                                   0.3    V
 Base-emitter saturation voltage             VBE (sat)   IC= 100mA, IB= 10mA                                   1     V
 Transition frequency                           fT       VCE= 6V, IC= 10mA                         180              MHz
 Collector output capacitance                  Cob       VCE=6V, IE=0, f=1MHz                                  4    pF
 Noise figure                                  NF        VCE=6V,IE=-0.1mA, f=1KHz, RG=2K                      15    dB

CLASSIFICATION OF hFE(1)
    Rank                       E                                   F                                     G

    Range                    150~300                             250~500                            400~800

    Marking                    LE                                  LF                                    LG




JinYu                                       www.htsemi.com
semiconductor
                                 2SC3052




JinYu           www.htsemi.com
semiconductor
                                 2SC3052




JinYu           www.htsemi.com
semiconductor



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