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                                                                                                                2SC3930

      TRANSISTOR (NPN)
                                                                                             SOT-323
 FEATURES
      For high-frequency Amplification Complementary to 2SA1532
      Optimum for RF amplification of FM/AM radios
      High transition frequency fT                                                           1.BASE
                                                                                             2.EMITTER
 MAXIMUM RATINGS (TA=25 unless otherwise noted)                                              3.COLLECTOR

  Symbol                     Parameter                     Value         Units
 VCBO           Collector-Base Voltage                       30           V
 VCEO           Collector-Emitter Voltage                    20           V
 VEBO           Emitter-Base Voltage                         5            V
 IC             Collector Current -Continuous                30          mA
 PC             Collector Power Dissipation                 150          mW
 TJ             Junction Temperature                        150           
 Tstg           Storage Temperature                        -55-150        


 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                             Symbol           Test   conditions    MIN      TYP      MAX      UNIT

 Collector-base breakdown voltage               V(BR)CBO      IC=100A,      IE=0       30                          V

 Collector-emitter breakdown voltage            V(BR)CEO      IC= 100A, IB=0           20                          V

 Emitter-base breakdown voltage                 V(BR)EBO      IE= 100A, IC=0            5                          V

 Collector cut-off current                        ICBO        VCB=10V,IE=0                                 0.1    A

 Emitter cut-off current                          IEBO        VEB=5V,IC=0                                  0.1    A

 DC current gain                                 hFE          VCE=10V,IC=1mA           70                220
                                                              VCE=10V,IE=1mA,
 Transition frequency                            fT                                    150                        MHz
                                                              f=200MHZ
 Common emitter reverse transfer                              VCB=10V,IC=1mA,
                                                Cre                                                        1.5     pF
  capacitance                                                 f=10.7MHZ
 Noise figure                                   NF            VCB=10V,IC=1mA, f=5MHz                       4       dB

 Reverse transfer impedance                     Zrb           VCB=10V,IC=1mA, f=2MHz                       50      


CLASSIFICATION OF hFE(1)
 Marking                                              VB                                        VC
 Range                                          70-140                                        110-220




JinYu                                           www.htsemi.com
semiconductor
                                 2SC3930




JinYu           www.htsemi.com
semiconductor
                                 2SC3930




JinYu           www.htsemi.com
semiconductor



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