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TRANSISTOR (NPN)
SOT-323
FEATURES
For high-frequency Amplification Complementary to 2SA1532
Optimum for RF amplification of FM/AM radios
High transition frequency fT 1.BASE
2.EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 30 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC= 100A, IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=10V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE VCE=10V,IC=1mA 70 220
VCE=10V,IE=1mA,
Transition frequency fT 150 MHz
f=200MHZ
Common emitter reverse transfer VCB=10V,IC=1mA,
Cre 1.5 pF
capacitance f=10.7MHZ
Noise figure NF VCB=10V,IC=1mA, f=5MHz 4 dB
Reverse transfer impedance Zrb VCB=10V,IC=1mA, f=2MHz 50
CLASSIFICATION OF hFE(1)
Marking VB VC
Range 70-140 110-220
JinYu www.htsemi.com
semiconductor
2SC3930
JinYu www.htsemi.com
semiconductor
2SC3930
JinYu www.htsemi.com
semiconductor
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