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                                                                                                           2SD596

TRANSISTOR (NPN)
FEATURES                                                                                 SOT-23
     High DC Current gain.
     Complimentary to 2SB624
 MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                         1.BASE
  Symbol                     Parameter                   Value      Units                2.EMITTER
 VCBO           Collector-Base Voltage                    30          V                  3.COLLECTOR
 VCEO           Collector-Emitter Voltage                 25          V
 VEBO           Emitter-Base Voltage                        5         V
 IC             Collector Current -Continuous            700         mA
 PC             Collector Power Dissipation              200         mW
 Tj             Junction Temperature                     150          
 Tstg           Storage Temperature                    -55-150        


  ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                 Parameter                        Symbol           Test     conditions   MIN         TYP    MAX     UNIT

      Collector-base breakdown voltage           V(BR)CBO        IC=100A,     IE=0        30                        V

      Collector-emitter breakdown voltage        V(BR)CEO        IC= 1mA, IB=0            25                        V

      Emitter-base breakdown voltage             V(BR)EBO        IE= 100A, IC=0           5                         V

      Collector cut-off current                    ICBO          VCB=30V , IE=0                             0.1     A
      Emitter cut-off current                      IEBO          VEB= 5V , IC=0                             0.1     A
                                                  hFE(1)*        VCE= 1V, IC= 100mA      110                400
      DC current gain
                                                  hFE(2)*        VCE=1V, IC= 700mA        50

      Collector-emitter saturation voltage       VCE(sat) *      IC=700mA, IB=70mA                          0.6     V

      Base-emitter voltage                       VBE *           VCE=6V, IC=10mA         0.6                0.7     V

      Transition frequency                        fT             VCE=6V, IC= 10mA        170                        MHz

      Collector Output Capacitance               Cob             VCB=6V,IE=0,f=10MHZ                 12               pF

      * Pulse test : Pulse width 350s,Duty Cycle2%.

      CLASSIFICATION OF hFE(1)
       Marking                         DV1               DV2                   DV3             DV4            DV5
       Range                        110-180            135-220              170-270       200-320           250-400




 JinYu                                          www.htsemi.com
 semiconductor
JinYu           www.htsemi.com
semiconductor
JinYu           www.htsemi.com
semiconductor



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