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                                                                                                                        2SD874A

TRANSISTOR (NPN)
 FEATURES
                                                                                             SOT-89
        Large collector power dissipation PC
        Low collector-emitter saturation voltage VCE(sat)                                    1. BASE
        Complementary to 2SB766A
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                               2. COLLECTOR       1
 Symbol                    Parameter                         Value         Units                                    2
 VCBO         Collector-Base Voltage                          60            V                3. EMITTER                   3
 VCEO         Collector-Emitter Voltage                       50            V
 VEBO         Emitter-Base Voltage                            5             V
 IC           Collector Current -Continuous                   1             A
 PC           Collector Power Dissipation                     0.5           W
 TJ           Junction Temperature                           150            
 Tstg         Storage Temperature                           -55-150         


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                            Symbol            Test     conditions                   MIN       TYP           MAX    UNIT

Collector-base breakdown voltage                  V(BR)CBO     IC=10A,IE=0                                60                              V

Collector-emitter breakdown voltage               V(BR)CEO     IC=2mA,IB=0                                50                              V

Emitter-base breakdown voltage                    V(BR)EBO     IE=10A,IC=0                                 5                              V

Collector cut-off current                            ICBO      VCB=20V,IE=0                                                        0.1   A

Emitter cut-off current                              IEBO      VEB=4V,IC=0                                                         0.1   A

                                                   hFE(1)      VCE=10V,IC=500mA                           85                      340
DC current gain
                                                   hFE(2)      VCE=5V,IC=1A                               50

Collector-emitter saturation voltage              VCE(sat)     IC=500mA,IB=50mA                                                    0.4    V

Base-emitter saturation voltage                   VBE(sat)     IC=500mA,IB=50mA                                                    1.2    V

Transition frequency                                  fT       VCE=10V,IC=50mA,f=200MHz                             200                  MHz

Collector output capacitance                         Cob       VCB=10V,IE=0,f=1MHz                                  20                   pF


 CLASSIFICATION OF            hFE(1)
 Rank                                         Q                                       R                                       S

 Range                                      85-170                                 120-240                               170-340

 Marking                                     YQ                                      YR                                       YS




JinYu                                             www.htsemi.com
semiconductor
                                 2SD874A




JinYu           www.htsemi.com
semiconductor



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