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                                                                                                                     2SD965


                                                                                          SOT-89-3L
  TRANSISTOR (NPN)

                                                                                          1. BASE
  FEATURES
     Low Collector-Emitter Saturation Voltage                                             2. COLLECTOR

     Large Collector Power Dissipation and Current
                                                                                          3. EMITTER
     Mini Power Type Package


  MAXIMUM RATINGS (Ta=25 unless otherwise noted)

    Symbol                           Parameter                             Value              Unit
        VCBO     Collector-Base Voltage                                        40              V
        VCEO     Collector-Emitter Voltage                                     20              V
        VEBO     Emitter-Base Voltage                                           7              V
         IC      Collector Current                                              5              A
        PC       Collector Power Dissipation                                   750            mW
        RJA      Thermal Resistance From Junction To Ambient                   167            /W
         Tj      Junction Temperature                                          150             
        Tstg     Storage Temperature                                     -55~+150              


  ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

               Parameter                         Symbol           Test   conditions                  Min   Typ       Max    Unit
   Collector-base breakdown voltage              V(BR)CBO       IC=100



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