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                                                                                                           2SD965A

TRANSISTOR (NPN)
 FEATURES
                                                                                    SOT-89
    Audio amplifier
    Flash unit of camera
                                                                                    1. BASE
    Switching circuit

 MAXIMUM RATINGS (TA=25 unless otherwise noted)                                     2. COLLECTOR

  Symbol                Parameter               Value      Units                                      1
 VCBO         Collector-Base Voltage              40         V                      3. EMITTER            2
 VCEO         Collector-Emitter Voltage           30         V                                                  3
 VEBO         Emitter-Base Voltage                 7         V
 IC           Collector Current -Continuous        5         A
 PC           Collector Power Dissipation        750        mW
 TJ           Junction Temperature               150         
 Tstg         Storage Temperature              -55-150       


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                       Symbol        Test    conditions     MIN        TYP         MAX       UNIT

 Collector-base breakdown voltage             V(BR)CBO   IC=0.1mA, IE=0            40                                V

 Collector-emitter breakdown voltage          V(BR)CEO   IC= 1mA. IB=0             30                                V

 Emitter-base breakdown voltage               V(BR)EBO   IE= 10A, IC=0              7                                V

 Collector cut-off current                      ICBO     VCB= 10V,IE=0                                    0.1       A

 Emitter cut-off current                        IEBO     VEB=7V, IC=0                                     0.1       A

                                               hFE(1)    VCE= 2 V, IC=1mA                     200

 DC current gain                               hFE'(2)   VCE= 2V, IC = 500mA       230                    800

                                               hFE(3)    VCE= 2V, IC =2A           150

 Collector-emitter saturation voltage         VCE(sat)   IC=3A, IB=0.1A                                    1         V

 Transition frequency                            fT      VCE=6V, IC=50mA                      150                   MHz

 Out capacitance                               Cob       VCB=20 V , IE=0, f=1MHZ                          50        pF


 CLASSIFICATION OF              hFE(2)
      Rank                             Q                                 R                            S

      Range                        230-380                         340-600                          560-800




JinYu                                         www.htsemi.com
semiconductor
                                 2SD965A




JinYu           www.htsemi.com
semiconductor



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