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                                                                                                                            2SD1119


                                                                                               SOT-89
TRANSISTOR (NPN)
FEATURES                                                                                       1. BASE
        Low collector-emitter saturation voltage VCE(sat)
        Satisfactory operation performances at high efficiency with the low                    2. COLLECTOR       1
       voltage power supply.                                                                                           2
                                                                                               3. EMITTER                   3

MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                     Parameter                         Value      Units
VCBO          Collector- Base Voltage                           40         V
VCEO          Collector-Emitter Voltage                         25         V
VEBO          Emitter-Base Voltage                              7          V
IC            Collector Current -Continuous                     3          A
PC            Collector Dissipation                            500        mW
TJ            Junction Temperature                             150         
Tstg          Storage Temperature                             -55-150      

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                          Symbol                 Test      conditions             MIN          TYP       MAX   UNIT

 Collector-base breakdown voltage                V(BR)CBO        IC =100A, IE=0                             40                         V

 Collector-emitter breakdown voltage             V(BR)CEO        IC =1mA, IB=0                              25                         V

 Emitter-base breakdown voltage                  V(BR)EBO        IE=10A, IC=0                               7                          V

 Collector cut-off current                         ICBO          VCB=10V, IE=0                                                  0.1   A

 Emitter cut-off current                           IEBO          VEB=6V, IC=0                                                   0.1   A

                                                   hFE(1)        VCE=2V, IC=500mA                        230                    600
 DC current gain
                                                   hFE(2)        VCE=2V, IC=2A                           150

 Collector-emitter saturation voltage             VCE(sat)       IC=3A, IB=0.1A                                                  1     V

 Transition frequency                                fT          VCE=6V, IC=50mA, f=200MHz                            150             MHz

 Collector output capacitance                       Cob          VCB=20V, f=1MHz                                                50    pF


CLASSIFICATION OF              hFE(1)
Rank                                                      Q                                                        R

Range                                             230-380                                                        340-600

Marking                                               TQ                                                           TR



JinYu                                            www.htsemi.com
semiconductor
                                 2SD1119




JinYu           www.htsemi.com
semiconductor



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