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SOT-89
TRANSISTOR (NPN)
FEATURES 1. BASE
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances at high efficiency with the low 2. COLLECTOR 1
voltage power supply. 2
3. EMITTER 3
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 3 A
PC Collector Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 7 V
Collector cut-off current ICBO VCB=10V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A
hFE(1) VCE=2V, IC=500mA 230 600
DC current gain
hFE(2) VCE=2V, IC=2A 150
Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.1A 1 V
Transition frequency fT VCE=6V, IC=50mA, f=200MHz 150 MHz
Collector output capacitance Cob VCB=20V, f=1MHz 50 pF
CLASSIFICATION OF hFE(1)
Rank Q R
Range 230-380 340-600
Marking TQ TR
JinYu www.htsemi.com
semiconductor
2SD1119
JinYu www.htsemi.com
semiconductor
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