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2sd1664


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                                                                                                                         2SD1664

TRANSISTOR (NPN)
                                                                                            SOT-89
 FEATURES
    Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
                                                                                            1. BASE
    Complements to 2SB1132

                                                                                            2. COLLECTOR       1
 MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                                   2
     Symbol                Parameter                       Value       Units
                                                                                            3. EMITTER                  3
 VCBO           Collector-Base   Voltage                    40           V
 VCEO           Collector-Emitter Voltage                   32           V
 VEBO           Emitter-Base Voltage                          5          V
 IC             Collector Current -Continuous                 1          A
 PC             Collector power dissipation                 500         mW
 TJ             Junction Temperature                        150          
 Tstg           Storage Temperature                    -55-150           


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                           Symbol                Test     conditions             MIN       TYP      MAX       UNIT

Collector-base breakdown voltage                   V(BR)CBO       IC=50A, IE=0                           40                            V

Collector-emitter breakdown voltage                V(BR)CEO       IC=1mA, IB=0                           32                            V

Emitter-base breakdown voltage                     V(BR)EBO       IE=50A, IC =0                           5                            V

Collector cut-off current                            ICBO         VCB=20V, IE=0                                                 0.5   A

Emitter cut-off current                              IEBO         VEB=4V, IC=0                                                  0.5   A

DC current gain                                      hFE          VCE=3V, IC=100mA                       82                     390

Collector-emitter saturation voltage               VCE(sat)       IC=0.5A, IB=50mA                                              0.4    V

Transition frequency                                  fT          VCE=5V, IC=50mA, f=100MHz                        150                MHz

Collector output capacitance                         Cob          VCB=10V, IE=0, f=1MHz                            15                 pF



     CLASSIFICATION OF           hFE
     Rank                                      P                                      Q                                     R

     Range                                  82-180                                120-270                              180-390

     Marking                                  DAP                                    DAQ                                 DAR




 1




JinYu                                              www.htsemi.com
semiconductor
                                 2SD1664




2




JinYu           www.htsemi.com
semiconductor
                                 2SD1664




3




JinYu           www.htsemi.com
semiconductor



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