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2sd1766


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                                                                                                                       2SD1766
TRANSISTOR (NPN)
 FEATURES                                                                                 SOT-89
      Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
      Complements to 2SB1188                                                              1. BASE

 MAXIMUM RATINGS (TA=25 unless otherwise noted)                                           2. COLLECTOR       1
  Symbol                  Parameter                     Value        Units
                                                                                                                 2
 VCBO        Collector-Base    Voltage                    40           V                  3. EMITTER                  3
 VCEO        Collector-Emitter Voltage                    32           V
 VEBO        Emitter-Base Voltage                         5            V
 IC          Collector Current -Continuous                2            A
 PC          Collector dissipation                       500          mW
 TJ          Junction Temperature                        150          
 Tstg        Storage Temperature                        -55-150       


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                           Symbol                 Test      conditions             MIN       TYP          MAX   UNIT

Collector-base breakdown voltage               V(BR)CBO        IC=50A, IE=0                            40                            V

Collector-emitter breakdown voltage            V(BR)CEO        IC=1mA, IB=0                            32                            V

Emitter-base breakdown voltage                 V(BR)EBO        IE=50A, IC=0                             5                            V

Collector cut-off current                         ICBO         VCB=20V, IE=0                                                   1    A

Emitter cut-off current                           IEBO         VEB=4V, IC=0                                                    1    A

DC current gain                                 hFE(1)         VCE=3V, IC=500mA                        82                     390

Collector-emitter saturation voltage           VCE(sat)        IC=2A, IB=0.2A                                                 0.8    V

Transition frequency                               fT          VCE=5V, IC=50mA, f=100MHz                         100                MHz

Collector output capacitance                      Cob          VCB=10V, IE=0, f=1MHz                             30                 pF


CLASSIFICATION OF             hFE(1)
Rank                                       P                                       Q                                      R

Range                                    82-180                                 120-270                              180-390

Marking                                  DBP                                      DBQ                                  DBR




  1




 JinYu                                            www.htsemi.com
 semiconductor
                                 2SD1766




2




JinYu           www.htsemi.com
semiconductor



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