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    TRANSISTOR (NPN)                                                                       SOT-89-3L

       High Breakdown Voltage and Current
                                                                                           1. BASE
       Excellent DC Current Gain Linearity
       Complement the 2SB1260                                                              2. COLLECTOR

       Low Collector-Emitter Saturation Voltage
                                                                                           3. EMITTER

    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

      Symbol                         Parameter                             Value              Unit
       VCBO      Collector-Base Voltage                                        100             V
        VCEO     Collector-Emitter Voltage                                     80              V
        VEBO     Emitter-Base Voltage                                          5               V
         IC      Collector Current                                              1              A
        PC       Collector Power Dissipation                                   500            mW
        RJA      Thermal Resistance From Junction To Ambient                   250            /W
         Tj      Junction Temperature                                          150             
        Tstg     Storage Temperature                                     -55~+150              

    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

               Parameter                         Symbol           Test   conditions                  Min   Typ       Max   Unit
    Collector-base breakdown voltage             V(BR)CBO       IC=50

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