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                                                                                                                      2SD2098

      FEATURES

          Excellent DC current gain characteristics                                  SOT-89
          Complements the 2SB1386
                                                                                     1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                     2. COLLECTOR       1
     Symbol               Parameter                Value        Units
                                                                                                            2
     VCBO        Collector-Base Voltage             50            V
                                                                                     3. EMITTER                   3
     VCEO        Collector-Emitter Voltage          20            V
     VEBO        Emitter-Base Voltage                6            V
     IC          Collector Current -Continuous       5            A
     PC          Collector Power Dissipation        500          mW
     TJ          Junction Temperature               150           
     Tstg        Storage Temperature              -55-150         


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                        Symbol         Test    conditions                MIN       TYP        MAX    UNIT

Collector-base breakdown voltage                 V(BR)CBO     IC=50A,IE=0                         50                           V

Collector-emitter breakdown voltage              V(BR)CEO     IC=1mA,IB=0                         20                           V

Emitter-base breakdown voltage                   V(BR)EBO     IE=50A, =0                           6                           V

Collector cut-off current                          ICBO       VCB=40V,IE=0                                              0.5   A

Emitter cut-off current                            IEBO       VEB=5V,IC=0                                               0.5   A

DC current gain                                    hFE        VCE=2V,IC=0.5A                      120                   390

Collector-emitter saturation voltage             VCE(sat)     IC=4A,IB=100mA                                             1     V

Transition frequency                                fT        VCE=6V,IC=50mA,f=100MHz                           150           MHz

Collector output capacitance                       Cob        VCB=20V,IE=0,f=1MHz                               30             pF

    CLASSIFICATION OF        hFE

    Rank                                                  Q                                                 R

    Range                                          120-270                                              180-390

    Marking                                          AHQ                                                 AHR




1




JinYu                                            www.htsemi.com
semiconductor
                                 2SD2098




2




JinYu           www.htsemi.com
semiconductor
                                 2SD2098




3




JinYu           www.htsemi.com
semiconductor

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