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2sd2114


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                                                                                                                  2SD2114
TRANSISTOR (NPN)
FEATURES                                                                                        SOT-23
     High DC current gain.
     High emitter-base voltage.
      Low VCE (sat).

 MARKING: BBV,BBW                                                                               1. BASE
                                                                                                2.EMITTER
     MAXIMUM RATINGS (TA=25 unless otherwise noted)                                             3.COLLECTOR

            Symbol               Parameter                      Value            Units
     VCBO              Collector-Base Voltage                     25              V
     VCEO              Collector-Emitter Voltage                  20              V
     VEBO              Emitter-Base Voltage                       12              V
     IC                Collector Current -Continuous              0.5             A
     PC                Collector Power Dissipation              0.25              W
     Tj                Junction Temperature                     150               
     Tstg              Storage Temperature                     -55-150            



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                            Symbol               Test     conditions     MIN        TYP        MAX    UNIT
 Collector-base breakdown voltage                      V(BR)CBO         IC=10A,       IE=0         25                           V
 Collector-emitter breakdown voltage                   V(BR)CEO         IC =1mA, IB=0              20                           V
 Emitter-base breakdown voltage                        V(BR)EBO         IE=10A, IC=0               12                           V
 Collector cut-off current                               ICBO           VCB=20 V, IE=0                                  0.5    A
 Emitter cut-off current                                 IEBO           VEB=10V,IC=0                                    0.5    A
 DC current gain                                         hFE            VCE=3V, IC=10mA           820                   2700
 Collector-emitter saturation voltage                  VCE(sat)         IC= 500mA, IB=20 mA                             0.4     V
                                                                        VCE=10V, IC=50mA
 Transition frequency                                     fT                                                 350               MHz
                                                                        f=100MHz
 output capacitance                                     Cob             VCB=10V,IE=0,f=1MHz                   8                 pF
                                                                        Vin=0.1V(rms),IB=1mA,
 On resistance                                          R(on)                                                0.8                
                                                                        f=1KHZ


CLASSIFICATION OF             hFE


 Rank                                                           V                                              W
 Range                                                    820-1800                                          1200-2700


 1




 JinYu                                             www.htsemi.com
 semiconductor
                                 2SD2114




2




JinYu           www.htsemi.com
semiconductor
                                 2SD2114




3




JinYu           www.htsemi.com
semiconductor



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