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                                                                                                                            2SD2413

TRANSISOR (NPN)
  FEATURES
       High collector to base voltage VCBO
                                                                                           SOT-89
       High collector to emitter voltage VCEO
       Large collector power dissipation PC
                                                                                           1. BASE
       Low collector to emitter saturation voltage VCE(sat)

                                                                                           2. COLLECTOR        1
        Marking:1S
                                                                                                                   2
        MAXIMUM RATINGS (TA=25 unless otherwise noted)                                     3. EMITTER                   3
        Symbol             Parameter                      Value       Units
        VCBO      Collector-Base Voltage                   400         V
        VCEO      Collector-Emitter Voltage                400         V
        VEBO      Emitter-Base Voltage                       5         V
        IC        Collector Current -Continuous            100         mA
        PC        Collector Power Dissipation              500        mW
        TJ        Junction Temperature                     150         
        Tstg      Storage Temperature                     -55-150      



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                        Symbol                  Test      conditions            MIN        TYP       MAX    UNIT

Collector-base breakdown voltage                V(BR)CBO         IC=100A, IE=0                          400                          V

Collector-emitter breakdown voltage             V(BR)CEO         IC=0.5mA, IB=0                         400                          V

Emitter-base breakdown voltage                  V(BR)EBO         IE=100A, IC=0                            5                          V

Collector cut-off current                          ICBO          VCB=400V, IE=0                                               50    A

Emitter cut-off current                            IEBO          VEB=5V, IC=0                                                 50    A

DC current gain                                     hFE          VCE=5V, IC=30mA                          30

Collector-emitter saturation voltage              VCE(sat)       IC=50mA, IB=5mA                                              1.5    V

Base-emitter saturation voltage                   VBE(sat)       IC=50mA, IB=5mA                                              1.5    V

Transition frequency                                 fT          VCE=30V, IC=20mA, f=200MHz                            40           MHz

Collector output capacitance                        Cob          VCB = 30V, IE=0, f=1MHz                                      7     pF




JinYu                                           www.htsemi.com
semiconductor
                                 2SD2413




JinYu           www.htsemi.com
semiconductor



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