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uma3n


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                                                                                                           UMA3N
 General purpose transistors (dual transistors)




                                                                                         SOT-353
    FEATURES
       Two DTA143T chips in a package
       Mounting cost and area be cut in half
                                                                                                   1
    Marking: A3

    Equivalent circuit




    Absolute maximum ratings (Ta=25)

 Symbol                 Parameter                Limits        Unit
    VCBO      Collector-Base Voltage                  -50        V
    VCEO      Collector-Emitter Voltage               -50        V
    VEBO      Emitter-Base Voltage                     -5        V
      IC      Collector Current -Continuous       -100          mA
      PC      Collector Dissipation                   150      mW
      Tj      Junction temperature                    150       
     Tstg     Storage Temperature               -55~+150        

    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

               Parameter                      Symbol             Test       conditions   Min    Typ    Max       Unit
    Collector-base breakdown voltage          V(BR)CBO      IC=-50A,IE=0                 -50                       V
    Collector-emitter breakdown voltage       V(BR)CEO      IC=-1mA,IB=0                 -50                       V
    Emitter-base breakdown voltage            V(BR)EBO      IE=-50A,IC=0                  -5                       V
    Collector cut-off current                   ICBO        VCB=-50V,IE=0                              -0.5       A
    Emitter cut-off current                     IEBO        VEB=4V,IC=0                                - 0.5      A
    DC current gain                             hFE         VCE=-5V,IC=-1mA              100           600
    Collector-emitter saturation voltage      VCE(sat)      IC=-5mA,IB=-0.25mA                         -0.3        V
    Transition frequency                         fT         VCE=-10V,IC=-5mA, f=100MHz          250              MHz
    Input resistor                              R1                                       3.29   4.7    6.11       K




1
JinYu                                          www.htsemi.com
semiconductor

                                                                                                       Date:2011/ 05



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