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umb3n


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                                                                                                   UMB3N
General purpose transistors (dual transistors)

                                                                                      SOT-363


 FEATURES
    Two DTA143T chips in a package
                                                                                           1
    Mounting possible with SOT-363 automatic mounting machines.
    Transistor elements are independent, eliminating interference.
    Mounting cost and area be cut in half.

 Marking: B3

 Equivalent circuit


 Absolute maximum ratings(Ta=25)

           Parameter              Symbol        Limits     Unit
    Collector-base voltage        V(BR)CBO        -50        V
    Collector-emitter voltage     V(BR)CEO        -50        V
    Emitter-base voltage          V(BR)EBO         -5        V
    Collector current                IC          -100       mA
    Collector          Power         PC          150        mW
    Junction temperature             Tj          150         
    Storage temperature             Tstg       -55~150       


 Electrical characteristics (Ta=25)

                  Parameter                  Symb        Min      Typ   Max    Unit           Conditions
    Collector-base breakdown voltage         V(BR)CB     -50                    V             IC=-50A
    Collector-emitter breakdown voltage      V(BR)CE     -50                    V              IC=-1mA
    Emitter-base breakdown voltage           V(BR)EB      -5                    V             IE=-50A
    Collector cut-off current                 ICBO                      -0.5   A              VCB=-50V
    Emitter cut-off current                   IEBO                      -0.5   A               VEB=-4V
    Collector-emitter saturation voltage     VCE(sat)                   -0.3    V        IC=-5mA,IB=-0.25mA
    DC current transfer ratio                  hFE       100            600                VCE=-5V,IC=-1mA
    Input resistance                           R1        3.29     4.7   6.11   K
    Transition frequency                        fT                250          MHz     VCE=-10V ,IE=5mA,f=100




1
JinYu                                      www.htsemi.com
semiconductor

                                                                                                Date:2011/ 05



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