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UMF5N
General purpose transistors (dual transistors)
FEATURES SOT-363
2SA2018 and DTC144E are housed independently in a package.
Mounting possible with SOT-363 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half. 1
(3) (2) (1)
Marking: F5
DTr2 Tr1
Equivalent circuit R1
R2
(4) (5) (6)
Tr1 Absolute maximum ratings (Ta=25)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -15 V
VCEO Collector-Emitter Voltage -12 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -500 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -15 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -6 V
Collector cut-off current ICBO VCB=-15V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-6V, IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC=-10mA 270 680
Collector-emitter saturation voltage VCE(sat) IC=-200mA, IB=-10mA -0.25 V
Transition frequency fT VCE=-2V, IE=-10mA, f=100MHz 260 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 6.5 pF
1
JinYu www.htsemi.com
semiconductor
Date:2011/ 05
UMF5N
Tr2 Absolute maximum ratings(Ta=25)
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VIN -10~+40 V
IO 30
Output current mA
IC(MAX) 100
Power dissipation Pd 150 mW
Junction temperature Tj 150
Storage temperature Tstg -55~150
Electrical characteristics (Ta=25)
Parameter Symbol Min. Typ Max. Unit Conditions
VI(off) 0.5 VCC=5V, IO=100A
Input voltage V
VI(on) 3.0 VO=0.3V, IO=2mA
Output voltage VO(on) 0.1 0.3 V IO/II=10mA/0.5mA
Input current II 0.18 mA VI=5V
Output current IO(off) 0.5 A VCC=50V, VI=0
DC current gain GI 68 VO=5V, IO=5mA
Input resistance R1 32.9 47 61.1 K -
Resistance ratio R2/R1 0.8 1 1.2 -
Transition frequency fT 250 MHz VCE=10V, IE=-5mA, f=100MHz
2
JinYu www.htsemi.com
semiconductor
Date:2011/ 05
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